IXYP10N65B3D1 Datasheet - IXYS

IXYP10N65B3D1 IGBT

Advance Technical Information XPTTM 650V IGBT GenX3TM w/Diode IXYP10N65B3D1 Extreme Light Punch Through IGBT for 5-30kHz Switching VCES = 650V IC110 = 10A VCE(sat)  1.95V tfi(typ) = 30ns TO-220 Symbol VCES VCGR VGES VGEM IC25 IC110 IIFC1M10 IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TTCC = 110°C = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, .

IXYP10N65B3D1 Features

* Optimized for 5-30kHz Switching

* Square RBSOA

* Avalanche Rated

* Anti-Parallel Fast Diode

* Short Circuit Capability

* International Standard Package Advantages

* High Power Density

* Extremely Rugged

* Low Gate Drive Requirement Applications

* Power Inver

IXYP10N65B3D1-IXYS.pdf