IXYB82N120C3H1 Datasheet - IXYS Corporation

IXYB82N120C3H1 High-Speed IGBT

1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYB82N120C3H1 Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C (Chip Capability) Lead Current Limit TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 2 Clamped Inductive Load TC = 25°C 164 A 160 A 82.

IXYB82N120C3H1 Features

* Optimized for Low Switching Losses

* Square RBSOA

* Anti-Parallel Ultra Fast Diode

* Positive Thermal Coefficient of Vce(sat)

* High Current Handling Capability

* International Standard Package Advantages

* High Power Density

* Low Gate Drive Requirement Application

IXYB82N120C3H1-IXYSCorporation.pdf