Part number:
IXYB82N120C3H1
Manufacturer:
IXYS Corporation
File Size:
259.83 KB
Description:
High-speed igbt.
IXYB82N120C3H1-IXYSCorporation.pdf
Datasheet Details
Part number:
IXYB82N120C3H1
Manufacturer:
IXYS Corporation
File Size:
259.83 KB
Description:
High-speed igbt.
IXYB82N120C3H1, High-Speed IGBT
1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYB82N120C3H1 Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C (Chip Capability) Lead Current Limit TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 2 Clamped Inductive Load TC = 25°C 164 A 160 A 82
IXYB82N120C3H1 Features
* Optimized for Low Switching Losses
* Square RBSOA
* Anti-Parallel Ultra Fast Diode
* Positive Thermal Coefficient of Vce(sat)
* High Current Handling Capability
* International Standard Package Advantages
* High Power Density
* Low Gate Drive Requirement Application
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