* Optimized for Low Switching Losses
* Square RBSOA
* Anti-Parallel Ultra Fast Diode
* Positive Thermal Coefficient of Vce(sat)
* High Current Handling Capability
* International Standard Package Advantages
* High Power Density
* Low Gate Drive Requirement Application
IXYB82N120C3H1 Datasheet (259.83 KB)
IXYB82N120C3H1
IXYS Corporation
259.83 KB
High-speed igbt.
1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYB82N120C3H1 Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 IF110 ICM SSOA .
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