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IXYA12N250CHV Datasheet - IXYS

IXYA12N250CHV High Voltage IGBT

High Voltage XPTTM IGBT Advance Technical Information IXYA12N250CHV IXYH12N250CHV VCES = 2500V IC110 = 12A V CE(sat)  4.50V tfi(typ) = 136ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case f.

IXYA12N250CHV Features

* High Voltage Packages

* High Blocking Voltage

* High Peak Current Capability

* Low Saturation Voltage Advantages

* Low Gate Drive Requirement

* High Power Density Applications

* Switch-Mode and Resonant-Mode Power Supplies

* Uninterruptible Power Supplies (UPS)

IXYA12N250CHV Datasheet (302.30 KB)

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Datasheet Details

Part number:

IXYA12N250CHV

Manufacturer:

IXYS

File Size:

302.30 KB

Description:

High voltage igbt.

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IXYA12N250CHV High Voltage IGBT IXYS

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