IXYH50N120C3 Datasheet - IXYS Corporation

IXYH50N120C3 High-Speed IGBT

1200V XPTTM IGBT GenX3TM IXYH50N120C3 High-Speed IGBT for 20-50 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 5Ω Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 1200 V 1200 .

IXYH50N120C3 Features

* z Optimized for Low Switching Losses z Square RBSOA z Positive Thermal Coefficient of Vce(sat) z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications z High Frequency Power Inverters z UPS z Motor Drives z SMPS z

IXYH50N120C3_IXYSCorporation.pdf