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IXYH10N170C

The IXYH10N170C is High Voltage IGBT designed by IXYS.

Product Overview

IXYS

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IXYH10N170C High Voltage IGBT by IXYS - Datasheet Preview — Datasheet preview – IXYH10N170C

Datasheet Details

Part number	IXYH10N170C
Manufacturer	IXYS
File Size	216.57 KB
Description	High Voltage IGBT
Datasheet	IXYH10N170C-IXYS.pdf
Additional preview pages of the IXYH10N170C datasheet.

Product details

Features

High Voltage Package.
High Blocking Voltage.
Low Saturation Voltage Advantages.
Low Gate Drive Requirement.
High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 10A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 1700 V 3.0 5.0 V 10 A 1 mA 100 nA 3.6 4.1.

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Published: Feb 16, 2025 |