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IXYH10N170C High Voltage IGBT

IXYH10N170C Description

High Voltage XPTTM IGBT Advance Technical Information IXYH10N170C VCES = 1700V IC110 = 10A V CE(sat)  4.1V tfi(typ) = 70ns Symbol VCES VC.

IXYH10N170C Features

* High Voltage Package
* High Blocking Voltage
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement
* High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, V

IXYH10N170C Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2017 IXYS CORPORATION, All Rights Reserved. DS100783A(5/17) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gf

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Datasheet Details

Part number
IXYH10N170C
Manufacturer
IXYS
File Size
216.57 KB
Datasheet
IXYH10N170C-IXYS.pdf
Description
High Voltage IGBT

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