IXYH10N170C High Voltage IGBT

IXYS

Description

High Voltage XPTTM IGBT Advance Technical Information IXYH10N170C VCES = 1700V IC110 = 10A V CE(sat)  4.1V tfi(typ) = 70ns Symbol VCES VC.

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Datasheet Specifications

Part number: IXYH10N170C
Manufacturer: IXYS
File Size: 216.57 KB
Datasheet: IXYH10N170C-IXYS.pdf
Description: High Voltage IGBT

Features

* High Voltage Package
* High Blocking Voltage
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement
* High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, V

Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2017 IXYS CORPORATION, All Rights Reserved. DS100783A(5/17) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gf

IXYH10N170C Distributors

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IXYH10N170C High Voltage IGBT IXYS

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