IXYH10N170C Datasheet - IXYS

High Voltage IGBT

IXYH10N170C Features

* High Voltage Package

* High Blocking Voltage

* Low Saturation Voltage Advantages

* Low Gate Drive Requirement

* High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, V

IXYH10N170C Datasheet (216.57 KB)

IXYH10N170C Datasheet Preview — Preview of IXYH10N170C PDF

Datasheet Details

Part number:

IXYH10N170C

Manufacturer:

IXYS

File Size:

216.57 KB

Description:

High voltage igbt.
High Voltage XPTTM IGBT Advance Technical Information IXYH10N170C VCES = 1700V IC110 = 10A V CE(sat)  4.1V tfi(typ) = 70ns Symbol VCES VC.

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