IXYH10N170CV1 High Voltage IGBT

IXYS

Description

High Voltage XPTTM IGBT w/ Diode Advance Technical Information IXYH10N170CV1 VCES = 1700V IC110 = 10A V CE(sat)  4.1V tfi(typ) = 70ns Sym.

📥 Download Datasheet

IXYH10N170CV1 Datasheet Preview — Preview of IXYH10N170CV1 PDF

Datasheet Specifications

Part number: IXYH10N170CV1
Manufacturer: IXYS
File Size: 224.72 KB
Datasheet: IXYH10N170CV1-IXYS.pdf
Description: High Voltage IGBT

Features

* High Voltage Package
* High Blocking Voltage
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement
* High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, V

Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2017 IXYS CORPORATION, All Rights Reserved. DS100784A(5/17) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gf

IXYH10N170CV1 Distributors

📁 Related Datasheet

IXYH20N120C3 IXYH50N120C3 IXYH50N120C3D1 IXYH82N120C3 IXYA20N120C3HV IXYB82N120C3H1

📌 All Tags

IXYH10N170CV1 High Voltage IGBT IXYS

IXYS IXYH10N170CV1-like datasheet