IXYH10N170CV1 Datasheet - IXYS

IXYH10N170CV1 High Voltage IGBT

High Voltage XPTTM IGBT w/ Diode Advance Technical Information IXYH10N170CV1 VCES = 1700V IC110 = 10A V CE(sat)  4.1V tfi(typ) = 70ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) f.

IXYH10N170CV1 Features

* High Voltage Package

* High Blocking Voltage

* Low Saturation Voltage Advantages

* Low Gate Drive Requirement

* High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, V

IXYH10N170CV1-IXYS.pdf