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IXYH10N170CV1 High Voltage IGBT

IXYH10N170CV1 Description

High Voltage XPTTM IGBT w/ Diode Advance Technical Information IXYH10N170CV1 VCES = 1700V IC110 = 10A V CE(sat)  4.1V tfi(typ) = 70ns Sym.

IXYH10N170CV1 Features

* High Voltage Package
* High Blocking Voltage
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement
* High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, V

IXYH10N170CV1 Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2017 IXYS CORPORATION, All Rights Reserved. DS100784A(5/17) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gf

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Datasheet Details

Part number
IXYH10N170CV1
Manufacturer
IXYS
File Size
224.72 KB
Datasheet
IXYH10N170CV1-IXYS.pdf
Description
High Voltage IGBT

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