IXYH10N170CV1

High Voltage IGBT

IXYS

IXYH10N170CV1 Features

* High Voltage Package

* High Blocking Voltage

* Low Saturation Voltage Advantages

* Low Gate Drive Requirement

* High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, V

IXYH10N170CV1 Datasheet (224.72 KB)

IXYH10N170CV1 Datasheet Preview — Preview of IXYH10N170CV1 PDF

Datasheet Details

Part number:

IXYH10N170CV1

Manufacturer:

IXYS

File Size:

224.72 KB

Description:

High voltage igbt.
High Voltage XPTTM IGBT w/ Diode Advance Technical Information IXYH10N170CV1 VCES = 1700V IC110 = 10A V CE(sat)  4.1V tfi(typ) = 70ns Sym.

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