IXYH120N65C3 Datasheet - IXYS

IXYH120N65C3 IGBT

Advance Technical Information XPTTM 650V IGBT GenX3TM Extreme Light Punch Through IGBT for 20-60kHz Switching IXYH120N65C3 VCES = 650V IC110 = 120A VCE(sat)  2.8V tfi(typ) = 46ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ .

IXYH120N65C3 Features

* Optimized for 20-60kHz Switching

* Square RBSOA

* Avalanche Rated

* Short Circuit Capability

* High Current Handling Capability

* International Standard Package Advantages

* High Power Density

* Low Gate Drive Requirement Applications

* Power Inverters

* UPS

IXYH120N65C3-IXYS.pdf