IXYP15N65C3D1 Datasheet - IXYS

IXYP15N65C3D1 IGBT

Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/Diode IXYA15N65C3D1 IXYP15N65C3D1 Extreme Light Punch Through IGBT for 20-60kHz Switching VCES = 650V IC110 = 15A VCE(sat)  2.5V tfi(typ) = 28ns TO-263 AA (IXYA) Symbol VCES VCGR VGES VGEM IC25 IC110 IIFC1M10 IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD MFCd Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 650 V 650 V ±20 V ±30 V TC = 25°C TC = 110°C .

IXYP15N65C3D1 Features

* Optimized for 20-60kHz Switching

* Square RBSOA

* Avalanche Rated

* Anti-Parallel Fast Diode

* Short Circuit Capability

* International Standard Packages Advantages

* High Power Density

* Extremely Rugged

* Low Gate Drive Requirement Applications

* Power I

IXYP15N65C3D1 Datasheet (216.97 KB)