IXYP15N65C3D1 IGBT
Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/Diode IXYA15N65C3D1 IXYP15N65C3D1 Extreme Light Punch Through IGBT for 20-60kHz Switching VCES = 650V IC110 = 15A VCE(sat) 2.5V tfi(typ) = 28ns TO-263 AA (IXYA) Symbol VCES VCGR VGES VGEM IC25 IC110 IIFC1M10 IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD MFCd Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 650 V 650 V ±20 V ±30 V TC = 25°C TC = 110°C .
IXYP15N65C3D1 Features
* Optimized for 20-60kHz Switching
* Square RBSOA
* Avalanche Rated
* Anti-Parallel Fast Diode
* Short Circuit Capability
* International Standard Packages
Advantages
* High Power Density
* Extremely Rugged
* Low Gate Drive Requirement
Applications
* Power I