IXYP10N65C3D1M Extreme Light Punch Through IGBT

IXYS

Description

Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/Diode (Electrically Isolated Tab) IXYP10N65C3D1M VCES = 650V IC110 = 7A V CE(sat) .

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Datasheet Specifications

Part number: IXYP10N65C3D1M
Manufacturer: IXYS
File Size: 260.44 KB
Datasheet: IXYP10N65C3D1M-IXYS.pdf
Description: Extreme Light Punch Through IGBT

Features

* Optimized for 20-60kHz Switching
* Plastic Overmolded Tab for Electrical Isolation
* Square RBSOA
* Avalanche Rated
* Anti-Parallel Fast Diode
* Short Circuit Capability
* 2500V~ Electrical Isolation
* International Standard Package Advantages
* High Power Densi

Applications

* Power Inverters
* UPS
* Motor Drives
* SMPS
* PFC Circuits
* Battery Chargers
* Welding Machines
* Lamp Ballasts
* High Frequency Power Inverters © 2018 IXYS CORPORATION, All Rights Reserved DS100605B(11/18) Symbol Test Conditions (TJ = 25°C Unless Otherwise

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IXYP10N65C3D1M Extreme Light Punch Through IGBT IXYS

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