IXYP10N65C3D1M Datasheet - IXYS

IXYP10N65C3D1M - Extreme Light Punch Through IGBT

Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/Diode (Electrically Isolated Tab) IXYP10N65C3D1M VCES = 650V IC110 = 7A V CE(sat)  2.6V tfi(typ) = 23ns Extreme Light Punch Through IGBT for 20-60kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC.

IXYP10N65C3D1M Features

* Optimized for 20-60kHz Switching

* Plastic Overmolded Tab for Electrical Isolation

* Square RBSOA

* Avalanche Rated

* Anti-Parallel Fast Diode

* Short Circuit Capability

* 2500V~ Electrical Isolation

* International Standard Package Advantages

* High Power Densi

IXYP10N65C3D1M-IXYS.pdf