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IXYP30N65C3 - Extreme Light Punch Through IGBT
XPTTM 650V IGBT GenX3TM Extreme Light Punch Through IGBT for 20-60kHz Switching IXYP30N65C3 IXYH30N65C3 VCES = 650V IC110 = 30A V CE(sat) 2.BD16A01 - 100 Base-T single port through hole Magnetics
100 Base-T single port through hole Magnetics Designed to meet IEEE802.3u requirement Primary inductance 350uH min with 8mA DC Bias RoHS Compliant. O.4-1462000-5 - 2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil
The Best Relaytion MT2 Relay 108-98006 Rev. C EC-JM00-0009-03 ECOC: JM10 1. Apr. 04 MT2 Relay 2 pole telecom/signal relay Through Hole Type (THT) N.IXYH30N65C3 - Extreme Light Punch Through IGBT
XPTTM 650V IGBT GenX3TM Extreme Light Punch Through IGBT for 20-60kHz Switching IXYP30N65C3 IXYH30N65C3 VCES = 650V IC110 = 30A V CE(sat) 2.CY7C1345G - 4-Mbit Flow-Through Sync SRAM
CY7C1345G 4-Mbit (128K × 36) Flow-Through Sync SRAM 4-Mbit (128K × 36) Flow-Through Sync SRAM Features ■ 128K × 36 common I/O ■ 3.3 V core power supp.3-1462000-1 - 2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil
The Best Relaytion MT2 Relay 108-98006 Rev. C EC-JM00-0009-03 ECOC: JM10 1. Apr. 04 MT2 Relay 2 pole telecom/signal relay Through Hole Type (THT) N.IXXH40N65C4D1 - Extreme Light Punch Through IGBT
Advance Technical Information XPTTM 650V IGBT GenX4TM w/Diode IXXH40N65C4D1 Extreme Light Punch Through IGBT for 5-20 kHz Switching VCES = 650V I.3-1462000-0 - 2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil
The Best Relaytion MT2 Relay 108-98006 Rev. C EC-JM00-0009-03 ECOC: JM10 1. Apr. 04 MT2 Relay 2 pole telecom/signal relay Through Hole Type (THT) N.3-1462000-7 - 2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil
The Best Relaytion MT2 Relay 108-98006 Rev. C EC-JM00-0009-03 ECOC: JM10 1. Apr. 04 MT2 Relay 2 pole telecom/signal relay Through Hole Type (THT) N.IXXN200N60B3 - Extreme Light Punch Through IGBT
Preliminary Technical Information XPTTM 600V IGBT GenX3TM Extreme Light Punch Through IGBT for 10-30kHz Switching IXXN200N60B3 E VCES = IC110 = V ≤.IXXQ30N60B3M - Extreme Light Punch Through IGBT
Preliminary Technical Information XPTTM 600V IGBT GenX3TM (Electrically Isolated Tab) Extreme Light Punch Through IGBT for 5-30 kHz Switching IXXQ30.3-1462000-6 - 2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil
The Best Relaytion MT2 Relay 108-98006 Rev. C EC-JM00-0009-03 ECOC: JM10 1. Apr. 04 MT2 Relay 2 pole telecom/signal relay Through Hole Type (THT) N.4-1462000-1 - 2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil
The Best Relaytion MT2 Relay 108-98006 Rev. C EC-JM00-0009-03 ECOC: JM10 1. Apr. 04 MT2 Relay 2 pole telecom/signal relay Through Hole Type (THT) N.4-1462000-7 - 2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil
The Best Relaytion MT2 Relay 108-98006 Rev. C EC-JM00-0009-03 ECOC: JM10 1. Apr. 04 MT2 Relay 2 pole telecom/signal relay Through Hole Type (THT) N.4-1462000-8 - 2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil
The Best Relaytion MT2 Relay 108-98006 Rev. C EC-JM00-0009-03 ECOC: JM10 1. Apr. 04 MT2 Relay 2 pole telecom/signal relay Through Hole Type (THT) N.IS61LF12832EC - SYNCHRONOUS FLOW-THROUGH SRAM
IS61(4)LF12836EC/IS61(4)VF12836EC/IS61(4)LF12832EC IS61(4)VF12832EC/IS61(4)LF25618EC/IS61(4)VF25618EC 128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS .7-1462000-0 - 2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil
The Best Relaytion MT2 Relay 108-98006 Rev. C EC-JM00-0009-03 ECOC: JM10 1. Apr. 04 MT2 Relay 2 pole telecom/signal relay Through Hole Type (THT) N.IXYP20N65C3D1M - Extreme Light Punch Through IGBT
Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/Diode (Electrically Isolated Tab) IXYP20N65C3D1M Extreme Light Punch Through IGBT for 2.QD18A11 - 1000 Base-T single port through hole Magnetics
1000 Base-T single port through hole Magnetics Designed to meet IEEE802.3ab requirement Primary inductance 350uH min with 8mA DC Bias RoHS Compliant..GS881Z36BGD - 9Mb Pipelined and Flow Through Synchronous NBT SRAM
GS881Z18B(T/D)/GS881Z32B(T/D)/GS881Z36B(T/D) 100-Pin TQFP & 165-Bump BGA 9Mb Pipelined and Flow Through Commercial Temp Industrial Temp Synchronous.