IXYP10N65C3D1 Datasheet - IXYS

IXYP10N65C3D1 IGBT

Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/Diode IXYP10N65C3D1 Extreme Light Punch Through IGBT for 20-60kHz Switching VCES = 650V IC110 = 10A VCE(sat)  2.50V tfi(typ) = 23ns TO-220 Symbol VCES VCGR VGES VGEM IC25 IC110 IIFC1M10 IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TTCC = 110°C = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 1.

IXYP10N65C3D1 Features

* Optimized for 20-60kHz Switching

* Square RBSOA

* Avalanche Rated

* Anti-Parallel Fast Diode

* Short Circuit Capability

* International Standard Package Advantages

* High Power Density

* Extremely Rugged

* Low Gate Drive Requirement Applications

* Power Inve

IXYP10N65C3D1-IXYS.pdf