1610E Datasheet | Specifications & PDF Download

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1610E Tuning Fork SMD Quartz Crystal

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TOKO

DFE201610E - Metal Alloy Inductors

Metal Alloy Inductors メタルアロイ®インダクタ DFE201610E Inductance Range: 0.24~10H Recommended patterns パターン (Unit: mm) (Unit: mm) FEATURES  Miniature si.
Rating: 1 (3 votes)
Hynix Semiconductor

HY57V161610ETP-I - 2 Banks x 512K x 16 Bit Synchronous DRAM

HY57V161610ETP-I 2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suite.
Rating: 1 (2 votes)
TDK

VLS201610E-CA - Inductors

INDUCTORS October 2017 Inductors for power circuits Wound ferrite VLS-E-CA series (For automobiles) VLS201610E-CA type VLS201610E-CA Caution INDUCTOR.
Rating: 1 (2 votes)
Hynix Semiconductor

HY57V161610E - 2 Banks x 512K x 16 Bit Synchronous DRAM

www.DataSheet4U.com HY57V161610E 2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DR.
Rating: 1 (2 votes)
Thinki Semiconductor

MURF1610E - 16.0 Ampere Isolated Glass Passivated Ultra Fast Recovery Rectifier

MURF1605 thru MURF1660 ® Pb Pb Free Plating Product MURF1605 thru MURF1660 ITO-220AB .112(2.85) .100(2.55) .406(10.3) .381(9.7) .134(3.4) .118(3.0).
Rating: 1 (2 votes)
Hynix Semiconductor

HY57V161610ET-I - 2 Banks x 512K x 16 Bit Synchronous DRAM

HY57V161610ET-I 2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited.
Rating: 1 (2 votes)
Thinki Semiconductor

MUR1610E - 16.0 Ampere Heatsink Glass Passivated Ultra Fast Recovery Rectifier

MUR1605 thru MUR1660 ® Pb Pb Free Plating Product MUR1605 thru MUR1660 TO-220AB .419(10.66) .387(9.85) .139(3.55) MIN 16.0 Ampere Glass Passivated.
Rating: 1 (1 votes)
YIC

1610E - Tuning Fork SMD Quartz Crystal

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Rating: 1 (1 votes)
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