Datasheet Specifications
- Part number
- HY57V161610ETP-I
- Manufacturer
- Hynix Semiconductor
- File Size
- 215.67 KB
- Datasheet
- HY57V161610ETP-I_HynixSemiconductor.pdf
- Description
- 2 Banks x 512K x 16 Bit Synchronous DRAM
Description
HY57V161610ETP-I 2 Banks x 512K x 16 Bit Synchronous DRAM .
Features
* Single 3.0V to 3.6V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM/LApplications
* which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. HY57V161610E is offering fully synchronous operation referenced to a positive edge clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are inteHY57V161610ETP-I Distributors
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