HY57V161610ETP-I Datasheet, Dram, Hynix Semiconductor

HY57V161610ETP-I Features

• Dram
• Single 3.0V to 3.6V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 50pin TSOP-II with

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HY57V161610ETP-I

Manufacturer:

Hynix Semiconductor

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📄 Datasheet

Description:

2 banks x 512k x 16 bit synchronous dram. THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which

HY57V161610ETP-I Application

• Applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. HY57V161610E is offering full

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HY57V161610ETP-I

Hynix Semiconductor

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