HY57V161610ETP-I Datasheet - Hynix Semiconductor

HY57V161610ETP-I - 2 Banks x 512K x 16 Bit Synchronous DRAM

THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. HY57V161610E is offering fully synchronous operation referenced to .

HY57V161610ETP-I Features

* Single 3.0V to 3.6V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM/L

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Datasheet Details

Part number:

HY57V161610ETP-I

Manufacturer:

Hynix Semiconductor

File Size:

215.67 KB

Description:

2 banks x 512k x 16 bit synchronous dram.

HY57V161610ETP-I Distributor

📁 Related Datasheet

HY57V161610ET-I HY57V161610E HY57V161610D HY57V161610D-I HY57V161610FT-5 HY57V161610FT-5I

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HY57V161610ETP-I Banks 512K Bit Synchronous DRAM Hynix Semiconductor