HY57V161610ET-I 2 Banks x 512K x 16 Bit Synchronous DRAM

Hynix Semiconductor

Description

HY57V161610ET-I 2 Banks x 512K x 16 Bit Synchronous DRAM .
THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large mem.

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Datasheet Specifications

Part number: HY57V161610ET-I
Manufacturer: Hynix Semiconductor
File Size: 72.51 KB
Datasheet: HY57V161610ET-I-HynixSemiconductor.pdf
Description: 2 Banks x 512K x 16 Bit Synchronous DRAM

Features

* Single 3.0V to 3.6V power supply
* All device pins are compatible with LVTTL interface
* JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin pitch
* All inputs and outputs referenced to positive edge of system clock
* Data mask function by UDQM/LDQM

Applications

* which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. HY57V161610E is offering fully synchronous operation referenced to a positive edge clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are inte

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HY57V161610ET-I Banks 512K Bit Synchronous DRAM Hynix Semiconductor

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