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HY57V161610ET-I

2 Banks x 512K x 16 Bit Synchronous DRAM

HY57V161610ET-I Features

* Single 3.0V to 3.6V power supply

* All device pins are compatible with LVTTL interface

* JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin pitch

* All inputs and outputs referenced to positive edge of system clock

* Data mask function by UDQM/LDQM

HY57V161610ET-I General Description

THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. HY57V161610E is offering fully synchronous operation referenced to .

HY57V161610ET-I Datasheet (72.51 KB)

Preview of HY57V161610ET-I PDF

Datasheet Details

Part number:

HY57V161610ET-I

Manufacturer:

Hynix Semiconductor

File Size:

72.51 KB

Description:

2 banks x 512k x 16 bit synchronous dram.

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TAGS

HY57V161610ET-I Banks 512K Bit Synchronous DRAM Hynix Semiconductor

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