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HY57V161610D-I

2 Banks x 512K x 16 Bit Synchronous DRAM

HY57V161610D-I Features

* Single 3.0V to 3.6V power supplyNote1)

* Auto refresh and self refresh

* All device pins are compatible with LVTTL interface

* 4096 refresh cycles / 64ms

* JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin pitch

* All inputs and outputs refer

HY57V161610D-I General Description

THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and industrial temperature range. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully synchronous operation referenced to a .

HY57V161610D-I Datasheet (161.62 KB)

Preview of HY57V161610D-I PDF

Datasheet Details

Part number:

HY57V161610D-I

Manufacturer:

Hynix Semiconductor

File Size:

161.62 KB

Description:

2 banks x 512k x 16 bit synchronous dram.

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TAGS

HY57V161610D-I Banks 512K Bit Synchronous DRAM Hynix Semiconductor

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