HY57V161610D 2 Banks x 512K x 16 Bit Synchronous DRAM

Hynix Semiconductor

Description

HY57V161610D 2 B a n k s x 5 1 2 K x 1 6 B it S y n c h r o n o u s D R A M .
THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and.

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Datasheet Specifications

Part number: HY57V161610D
Manufacturer: Hynix Semiconductor
File Size: 73.20 KB
Datasheet: HY57V161610D_HynixSemiconductor.pdf
Description: 2 Banks x 512K x 16 Bit Synchronous DRAM

Features

* Single 3.0V to 3.6V power supply Note1)
* Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 and Full Page for Sequence Burst All device pins are compatible with LVTTL interface J

Applications

* which require low power consumption and industrial temperature range. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully synchronous operation referenced to a positive edge clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data

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HY57V161610D Banks 512K Bit Synchronous DRAM Hynix Semiconductor

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