HY57V161610D Datasheet - Hynix Semiconductor

HY57V161610D - 2 Banks x 512K x 16 Bit Synchronous DRAM

THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and industrial temperature range. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully synchronous operation referenced to a .

HY57V161610D Features

* Single 3.0V to 3.6V power supply Note1)

* Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 and Full Page for Sequence Burst All device pins are compatible with LVTTL interface J

HY57V161610D_HynixSemiconductor.pdf

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Datasheet Details

Part number:

HY57V161610D

Manufacturer:

Hynix Semiconductor

File Size:

73.20 KB

Description:

2 banks x 512k x 16 bit synchronous dram.

HY57V161610D Distributor

📁 Related Datasheet

HY57V161610D-I HY57V161610E HY57V161610ET-I HY57V161610ETP-I HY57V161610FT-5 HY57V161610FT-5I

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HY57V161610D Banks 512K Bit Synchronous DRAM Hynix Semiconductor