17-25 Datasheet | Specifications & PDF Download

U T C LM317L LINEAR INTEGRATED CIRCUIT LOW CURRENT 1.25V TO 37V ADJUSTABLE VOLTAGE REGULATOR DESCRIPTION The UTC LM317L is a monolithic integrated cir

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Data Travo Flyback FA137WJZZ Tampak Bawah Skema Koneksi No. Pin 1 2 Fungsi H B+130 3 45 6 7 8 9 10 GND 24 NC AFC 180 GND HT ABL Digunakan

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BC817 BC818 BC817 BC818 SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren IC = 800 mA hFE ~ 160/250/400 Tjmax = 150°C VCES

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NPN General Purpose Amplifier FEATURES z For general AF application. z Complementary PNP type available BC807. z High collector current, high current

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SMD General Purpose Transistor (NPN) BC817-16/BC817-25/BC817-40 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transi

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Bulletin I27102 rev. C 05/02 IRK. SERIES SCR / SCR and SCR / DIODE Features High voltage Electrically isolated base plate 3000 V RMS isolating voltag

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This X25170 device has been acquired by IC MICROSYSTEMS from Xicor, Inc. ICmic TM IC MICROSYSTEMS 16K X25170 SPI Serial E 2PROM with Block Lock ™

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Note 1. AT17LV65 and AT17LV128 are Not Recommended for New Designs (NRND) and are Replaced by AT17LV256. AT17LV65(1), AT17LV128(1), AT17LV256, AT17LV

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Ordering number:EN3820 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. N-Channel Silicon MOSFE

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Features • EE Programmable 65,536 x 1-, 131,072 x 1-, and 262,144 x 1-bit Serial Memories Designed to Store Configuration Programs for Field Programma

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Note 1. AT17LV65A, AT17LV128A, and AT17LV256A are Not Recommended for New Designs (NRND) and are Replaced by AT17LV512A. AT17LV65A(1), AT17LV128A(1),

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Alfa-MOS Technology General Description AFC2517W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo

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CMOS/TTL COMPATIBLE VOLTAGE CONTROLLED CRYSTAL OSCILLATOR ASVV FEATURES: • Low profile (1.6) SMD VCXO • Tristate functions • Seam sealed package assu

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Features • EE Programmable 65,536 x 1, 131,072 x 1 and 262,144 x 1 bit Serial Memories Designed to Store Configuration Programs for Programmable Gate

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Features • EE Programmable 262,144 x 1-, 524,288 x 1-, 1,048,576 x 1-, 2,097,152 x 1-, and • • • • • • • • 4,194,304 x 1-bit Serial Memories Designed

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Data Sheet No. PD94141revA IRU1117-25(PbF) FEATURES Guaranteed < 1.2V Dropout at 800mALoad Current Fast Transient Response 1% Voltage Reference Initi

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Ceramic transient voltage suppressors SMD disk varistors standard series Series/Type: Date: August 2008 www.DataSheet.co.kr © EPCOS AG 2008. Reprodu

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Type CGS High-Cap Screw Terminal Aluminum Electrolytic Capacitor High CV, Screw Terminal Capacitors Type CGS screw terminal, aluminum electrolytic cap

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • We declare that the material of product compliance with RoHS requirements. LBC8

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General Purpose Transistors BC817-16-G/25-G/40-G (NPN) RoHS Device Features - For general AF applications. - High collector current. - High current g

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