18-Channel Datasheet | Specifications & PDF Download

MIX2018E 5W F MIX2018E、5W F 。EMIFM 。 MIX2018EPSRR MIX2018ERF。 PWM、PCB ,。90%, MIX2018E 。  FM  D： －5W (VDD=5.0V, RL =2Ω，THD+N=10%)  F： －4.9W

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HAA2018 AB /D ，5.3W HAA2018FM、AB/D、、  AB、D 5.3W。EMI  D： FM。 －5.3W (VDD=5.0V, RL =2Ω，THD+N=10%) －3.2W (VDD=5.0V, RL =4Ω，THD+N=10%) HAA20

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www.vishay.com SiRA18DDP Vishay Siliconix N-Channel 30 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 5.15 mm Top View PRODUCT SU

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www.vishay.com SiRA18DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 5.15 mm Top View PRODUCT SUM

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B18N20D/F N-Channel 200-V (D-S) MOSFET General Description B18N20D/F combines advanced trench MOSFET technology with a low resistance package to prov

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ZXMP10A18G 100V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = - 100V : RDS(on) = 0.150 DESCRIPTION This new generation of Trench MOSFETs from

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SHENZHEN FUMAN ELECTRONICS CO., LTD. TC1181 (：S&CIC1060) 2 3 、  MOS  、、  D  （1.0Ω） 、  1.8A, 2.5A   DIP-8、SOP-8  、 I/O

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AOL1718 30V N-Channel MOSFET SRFET TM General Description SRFETTM AOL1718 uses advanced trench technology with a monolithically integrated Schottky d

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N N- CHANNEL MOSFET R JCS18N50H MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 18 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High efficie

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2N5716 (SILICON) 2N5717 2N5718 SILICON LOW NOISE N·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS Depletion Mode Junction Field·Effect Transistors designe

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UNISONIC TECHNOLOGIES CO., LTD 18NM60 Power MOSFET 18A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18NM60 uses UTC’s advanced proprietary, p

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UNISONIC TECHNOLOGIES CO., LTD 18N60 18A, 600V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, plan

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JW19818 Parameters Subject to Change Without Notice Single-Channel Linear LED Driver DESCRIPTION JW®19818 is a single channel linear LED driver wit

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FETek Technology Corp.  100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell d

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Machine Translated by Google MIX2018 4.8W Single Channel Class F Audio Power Amplifier describe MIX2018 is a high efficiency, filter-free 4.8W mono C

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Advanced Power Electronics Corp. AP18N20GS/P-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Simple Drive Requir

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AP18T10GI RoHS-compliant Product Advanced Power Electronics Corp. ▼ Fast Switching Performance ▼ Single Drive Requirement ▼ Full Isolation Package G

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NCE60R180,NCE60R180F N-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction technology and d

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