18-Channel Datasheet | Specifications & PDF Download

HAA2018 AB /D ，5.3W HAA2018FM、AB/D、、  AB、D 5.3W。EMI  D： FM。 －5.3W (VDD=5.0V, RL =2Ω，THD+N=10%) －3.2W (VDD=5.0V, RL =4Ω，THD+N=10%) HAA20

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MIX2018E 5W F MIX2018E、5W F 。EMIFM 。 MIX2018EPSRR MIX2018ERF。 PWM、PCB ,。90%, MIX2018E 。  FM  D： －5W (VDD=5.0V, RL =2Ω，THD+N=10%)  F： －4.9W

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Description： This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a w

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QM18N20D N-Channel 200V Fast Switching MOSFET General Description The QM18N20D is a high performance N-channel MOSFET which utilizes high voltage te

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Dra

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FDP18N50 / FDPF18N50 500V N-Channel MOSFET April 2007 FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features • 18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V

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N-CHANNEL 60V - 0.015 W - 50A TO-220 STripFET™ POWER MOSFET TYPE STP1806 ■ ■ ■ STP1806 VDSS 60 V RDS(on) < 0.018 W ID 50 A TYPICAL RDS(on) = 0.01

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、CST118S ： CST118S CST118S ，，，。 CST118S MOS ，、、，，CST118S （1.6Ω）， 1.8A 2.5A ， ，CST118S SOP8 。 、CST118S ： 、CST118S ： * MOS * *（1.6Ω） * * 1

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Machine Translated by Google MIX2018 4.8W Single Channel Class F Audio Power Amplifier describe MIX2018 is a high efficiency, filter-free 4.8W mono C

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HAA2018A AB /D ，12W HAA2018AFM、AB/D、、  AB、D 12W。EMI  D： FM。 －12W (VDD=7.0V, RL =2Ω，THD+N=10%) －6.5W (VDD=7.0V, RL =4Ω，THD+N=10%) HAA20

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http://www.ncepower.com Pb Free Product NCEP60T18 NCE N-Channel Super Trench Power MOSFET Description The NCEP60T18 uses Super Trench technology tha

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P1825HDB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 250V 230mΩ @VGS = 10V 18A TO-252 ABSOLUTE MAXIMUM RATINGS (TA

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EMC1812/13/14/15/33 Data Sheet Multichannel Low-Voltage Remote Diode Sensor Family Features • Measures Temperature Rate of Change Calculation with Pre

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P1820HTFB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 200V 150mΩ @VGS = 10V 18A TO-220F ABSOLUTE MAXIMUM RATINGS (T

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Condenser Microphone Applications

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2SK1618(L), 2SK1618(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo

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ZXMP10A18K 100V DPAK P-channel enhancement mode MOSFET Summary V(BR)DSS -100 0.190 @ VGS= -6V -5.2 RDS(on) (⍀) 0.150 @ VGS= -10V ID (A) -5.9 Descript

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HAT2183WP Silicon N Channel Power MOS FET Power Switching Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Pa

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