.
R1275NS18M - Distributed Gate Thyristor
Date:- 1 Apr, 2003 Data Sheet Issue:- 2 Distributed Gate Thyristor Types R1275NS14# to R1275NS21# (Old Type Number: R395CH21) Absolute Maximum Ratin.MCD2926 - 18MHz-650MHz Dual Frequency Synthesizer
MCD2926 18MHz-650MHz Dual Frequency Synthesizer (Version 2.5) MC Devices® MCD2926 18MHz-650MHz Dual Frequency Synthesizer General Description The MC.LC7218M - PLL Frequency Synthesizer
Ordering number : EN4758B CMOS LSI LC7218, 7218M, 7218JM PLL Frequency Synthesizer for Electronic Tuning in AV Systems Overview The LC7218, LC7218M.S5218M - Low Drop Output Voltage Regulator
Semiconductor S52xxM Low Drop Output Voltage Regulator Description The S52xxM is a u-cap 150mA linear voltage regulator in the SOT-25 package. This .V18MLA0402 - Multilayer Transient Voltage Surge Suppressors
Next Previous Surface Mount Varistors Multilayer Transient Voltage Surge Suppressors ML Varistor Series The ML Series family of Transient Voltage S.V18MLA1206 - Multilayer Transient Voltage Surge Suppressors
Next Previous Surface Mount Varistors Multilayer Transient Voltage Surge Suppressors ML Varistor Series The ML Series family of Transient Voltage S.IS61DDP2B451236A1 - 18Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
IS61DDP2B41M18A/A1/A2 IS61DDP2B451236A/A1/A2 1Mx18, 512Kx36 18Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM (2.0 Cycle Read Latency) ADVANCED INFORMATION .UMA1018M - Low-voltage dual frequency synthesizer for radio telephones
INTEGRATED CIRCUITS DATA SHEET UMA1018M Low-voltage dual frequency synthesizer for radio telephones Product specification Supersedes data of November.LA6518M - 2-Output Power Operational Amplifier
Ordering number: EN 5162 Monolithic Linear IC LA6518M 2-Channel Power Operational Amplifier Applications The LA6518M is a 2-output power operationa.MAX818M - +5V Microprocessor Supervisory Circuits
19-0494; Rev 1; 3/96 +5V Microprocessor Supervisory Circuits _______________General Description The MAX817/MAX818/MAX819 microprocessor (µP) supervis.P0118MA1AA3 - 0.8A SCRs
® P01 Series 0.8A SCRs SENSITIVE MAIN FEATURES: Symbol IT(RMS) VDRM/VRRM IGT Value 0.8 400 and 600 5 to 200 Unit A V µA G A K DESCRIPTION Thanks.P0118MA5AA4 - 0.8A SCRs
® P01 Series 0.8A SCRs SENSITIVE MAIN FEATURES: Symbol IT(RMS) VDRM/VRRM IGT Value 0.8 400 and 600 5 to 200 Unit A V µA G A K DESCRIPTION Thanks.P0118MN - 0.8A SCRs
® P01 Series 0.8A SCRs SENSITIVE MAIN FEATURES: Symbol IT(RMS) VDRM/VRRM IGT Value 0.8 400 and 600 5 to 200 Unit A V µA G A K DESCRIPTION Thanks.TSA5518M - 1.3 GHz bidirectional I2C-bus controlled synthesizer
INTEGRATED CIRCUITS DATA SHEET TSA5518M 1.3 GHz bidirectional I2C-bus controlled synthesizer Product specification File under Integrated Circuits, IC.UPD44165182 - (UPD44165082/182/362) 18M-BIT QDRII SRAM 2-WORD BURST OPERATION
DATA SHEET MOS INTEGRATED CIRCUIT µPD44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µPD44165082 is a 2,09.IDT71P72204 - (IDT71P72x04) 18Mb Pipelined QDRII SRAM Burst of 2
www.DataSheet4U.com 18Mb Pipelined QDR™II SRAM Burst of 2 Features x x x x x x Description Advance Information IDT71P72204 IDT71P72104 IDT71P72804 .IDT71P74104 - (IDT71P74x04) 18Mb Pipelined QDR II SRAM Burst of 4
www.DataSheet4U.com 18Mb Pipelined QDR™II SRAM Burst of 4 Features x x x x x x Description Advance Information IDT71P74204 IDT71P74104 IDT71P74804 .IDT71P74804 - (IDT71P74x04) 18Mb Pipelined QDR II SRAM Burst of 4
www.DataSheet4U.com 18Mb Pipelined QDR™II SRAM Burst of 4 Features x x x x x x Description Advance Information IDT71P74204 IDT71P74104 IDT71P74804 .FB18M5M1 - (FB18x5M1) 8A Glass Passivated Bridge Rectifier
www.DataSheet4U.com FBI8A5M1 FBI8M5M1 8 Amp. Glass Passivated Bridge Rectifier Dimensions in mm. 25 3.2 Plastic Case 3.5 Voltage 50 to 1000 .IDT71P71604 - (IDT71P71604 / IDT71P71804) 18Mb Pipelined DDRII SRAM Burst of 2
18Mb Pipelined DDR™II SRAM Burst of 2 Features ◆ ◆ ◆ ◆ ◆ www.DataSheet4U.com ◆ ◆ ◆ ◆ IDT71P71804 IDT71P71604 Description The IDT DDRIITM Burst of tw.