18M Datasheet | Specifications & PDF Download

Features and Benefits PNP Transistor • BVCEO > -20V • IC = -3.5A Continuous Collector Current • Low Saturation Voltage (-220mV max @ -1A) • RSAT = 64m

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GS8182S08/09/18/36BD-400/375/333/300/250/200/167 165-Bump BGA Commercial Temp Industrial Temp 18Mb Burst of 2 SigmaSIO DDR-IITM SRAM 400 MHz–167 MH

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GS8182S08/09/18/36BD-400/375/333/300/250/200/167 165-Bump BGA Commercial Temp Industrial Temp 18Mb Burst of 2 SigmaSIO DDR-IITM SRAM 400 MHz–167 MH

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GS8182T08/09/18/36BD-400/375/333/300/250/200/167 165-Bump BGA Commercial Temp Industrial Temp 18Mb SigmaDDR-II™ Burst of 2 SRAM 400 MHz–167 MHz 1.8

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GS8182T08/09/18/36BD-400/375/333/300/250/200/167 165-Bump BGA Commercial Temp Industrial Temp 18Mb SigmaDDR-II™ Burst of 2 SRAM 400 MHz–167 MHz 1.8

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Preliminary GS8161ZxxB(T/D)-xxxV 100-Pin TQFP & 165-Bump BGA 18Mb Pipelined and Flow Through Commercial Temp Industrial Temp Synchronous NBT SRAM

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100-Pin TQFP Commercial Temp Industrial Temp GS8160Z18/36T-250/225/200/166/150/133 18Mb Pipelined and Flow Through 250 MHz–133 MHz Synchronous NBT

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GS816218/36D(B/D)-400/375/333/250/200/150 119 & 165 BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs 400 MHz–150

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18Mb Pipelined DDR™II SRAM Burst of 2 Features ◆ ◆ ◆ ◆ ◆ www.DataSheet4U.com ◆ ◆ ◆ ◆ IDT71P71804 IDT71P71604 Description The IDT DDRIITM Burst of tw

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GS8182T19/37BD-435/400/375/333/300 165-Bump BGA Commercial Temp Industrial Temp 18Mb SigmaDDR-II+TM Burst of 2 SRAM 435 MHz–300 MHz 1.8 V VDD 1.8 V

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GS816018w/3w2w/3.D6aBtaTSh-2ee5t04U/2.c0o0m/150 100-Pin TQFP Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 25

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100-Pin TQFP Commercial Temp Industrial Temp Preliminary GS816018/32/36T-250/225/200/166/150/133 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAM

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GS8161xxD(GT/D)-xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 333 MHz–150 MH

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GS816218/36D(B/D)-400/375/333/250/200/150 119 & 165 BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs 400 MHz–150

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GS816218/36D(B/D)-400/375/333/250/200/150 119 & 165 BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs 400 MHz–150

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GS816218/36D(B/D)-400/375/333/250/200/150 119 & 165 BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs 400 MHz–150

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IS61DDPB21M18A/A1/A2 IS61DDPB251236A/A1/A2 1Mx18, 512Kx36 18Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM (2.5 Cycle Read Latency) ADVANCED INFORMATION JU

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® P01 Series 0.8A SCRs SENSITIVE MAIN FEATURES: Symbol IT(RMS) VDRM/VRRM IGT Value 0.8 400 and 600 5 to 200 Unit A V µA G A K DESCRIPTION Thanks

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DATA SHEET MOS INTEGRATED CIRCUIT µPD44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µPD44165082 is a 2,09

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DATA SHEET MOS INTEGRATED CIRCUIT µPD44164084, 44164184, 44164364 18M-BIT DDRII SRAM 4-WORD BURST OPERATION Description The µPD44164084 is a 2,097,

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