1K3 Datasheet | Specifications & PDF Download

Silicon N-Channel Power MOSFET HPA650R1K3DN ○R General Description： HPA650R1K3DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou

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Silicon N-Channel Power MOSFET HPU650R1K3DN ○R General Description： HPU650R1K3DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou

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Silicon N-Channel Power MOSFET HPA700R1K3SA ○R General Description： HPA700R1K3SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super j

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DATA SHEET GENERAL PURPOSE CHIP RESISTORS RC0603 5%, 1%, 0.5% RoHS compliant Product specification – August 27, 2013 V.7 Supersedes Date of Mar. 06,

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Silicon N-Channel Power MOSFET HPU700R1K3SA General Description： HPU700R1K3SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junct

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Aluminum Electrolytic Capacitor/FK Surface Mount Type Series: FK Type : V n Features Endurance: 2000 to 5000h at105°C Low impedance (40 to 60% less th

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ALUMINUM ELECTROLYTIC CAPACITORS BX High Temperature Range, For +150°C Use series Laminated case series. Suited for automobile electronics where heav

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DATA SHEET GENERAL PURPOSE CHIP RESISTORS RC0603 5%, 1%, 0.5% RoHS compliant Product specification – August 27, 2013 V.7 Supersedes Date of Mar. 06,

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Silicon N-Channel Power MOSFET HPD700R1K3SA ○R General Description： HPD700R1K3SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super j

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STC micro STC8F family of Micro-controllers Reference Manual Date of update：2018/3/20 -1- 67& )6HULHV0DQXDO Contents 1 Overview

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TSD80R1K3S1/TSU80R1K3S1 800V 4A N-Channel SJ-MOSFET TSD80R1K3S1/TSU80R1K3S1 800V 4A N-Channel SJ-MOSFET General Description Truesemi SJ-FET is new g

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Infrared Emitting Diodes(GaAs) K O D E N S H I EL-1K3 DIMENSIONS The EL-1K3 is a high-power GaAs IRED mounted in durable, hermetically sealed TO-18

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Aluminum Electrolytic Capacitor/FK Surface Mount Type Series: FK Type : V Country of Origin n Features Endurance: 2000 to 5000h at105°C Low impeda

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Aluminum Electrolytic Capacitors/ TG Surface Mount Type Series: ● ● ● ● ● TG Type: V ■ Features Endurance:125 °C 1000 h to 2000 h Miniaturization

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Aluminum Electrolytic Capacitors/ TG Surface Mount Type Series: ● ● ● ● ● TG Type: V ■ Features Endurance:125 °C 1000 h to 2000 h Miniaturization

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Aluminum Electrolytic Capacitors/ TG Surface Mount Type Series: ● ● ● ● ● TG Type: V ■ Features Endurance:125 °C 1000 h to 2000 h Miniaturization

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ALUMINUM ELECTROLYTIC CAPACITORS GU Snap-in Terminal Type, 105°C Standard series Withstanding 3000 hours application of rated ripple current at 105°C

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