1N5408 Datasheet | Specifications & PDF Download

® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Current Capability  High Reliability  High Surge Current Capabi

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1N5400, 1N5401, 1N5402, 1N5403, 1N5404, 1N5405, 1N5406, 1N5407, 1N5408 www.vishay.com Vishay General Semiconductor General Purpose Plastic Rectifie

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OBSOLETE – PART DISCONTINUED PART OBSOLETE USE S3A-S3M Series 1N5400 - 1N5408 3.0A RECTIFIER Features • Diffused Junction • High Current Capability

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1N5401 - 1N5408 — General-Purpose Rectifiers August 2015 1N5401 - 1N5408 General-Purpose Rectifiers Features • 3.0 A Operation at TA = 75°C with No

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1N5400-1N5408 Technical Data Data Sheet N0547, Rev. A 1N5400 THRU 1N5408 GLASS PASSIVATED SILICON RECTIFIER Features DO-201AD  The plastic package

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Elektronische Bauelemente 1N5400G ~ 1N5408G Voltage 50 ~ 1000 V 3.0 Amp Glass Passivated Fast Recovery Rectifiers FEATURES  Low Forward Voltage Dro

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1N5400 - IN5408 Power Diode 1A to 3A, Standard Axial Rectifiers Features: • 3.0 ampere operation at TA = 75°C with no thermal runaway. • High current

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Features and Benefits • Glass Passivated Die Construction • High Current Capability and Low Forward Voltage Drop • Surge Overload Rating to 125A Peak

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1N5400G – 1N5408G Taiwan Semiconductor 3A, 50V - 1000V Standard Rectifier FEATURES ● AEC-Q101 qualified available ● Glass passivated chip junction ●

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GLASS PASSIVATED RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes 1N5400G THRU 1N5408G FEATURES * Low cost * Low leakage * Low forward v

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1N5400G-K – 1N5408G-K Taiwan Semiconductor 3A, 50V - 1000V Standard Rectifier FEATURES ● Glass passivated chip junction ● High current capability, L

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CREAT BY ART 3A, 50V - 1000V Silicon Rectifiers 1N5400 - 1N5408 Taiwan Semiconductor FEATURES - High efficiency, Low VF - High current capability -

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1I5400 thru 1N5408 Axial Lead Standard Recovery Silicon Rectifiers, 3 Amp, DO−201AD Features: D 3 Amp Operation at TA = +75°C with no Thermal Runaway

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UNISONIC TECHNOLOGIES CO., LTD 1N5408G GLASS PASSIVATED SILICON RECTIFIER DIODE 1  DESCRIPTION The UTC 1N5408G is a glass passivated silicon rectif

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1N5400GP 1N5408GP 3.0 Amp. Glass Passivated Junction Rectifier DO-201AD (DO-27) Voltage 50V to 1000 V Current 3.0 A at 105º C R FEATURES

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Axial-Lead Glass Passivated Standard Recovery Rectifiers 1N5400 thru 1N5408 Lead mounted standard recovery rectifiers are designed for use in power su

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MCC Features • • • • •
     omponents 21201 Itasca Street Chatsworth  # $ % # 1N5400GP T

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1N 5400 K … 1N 5408 K Silicon Rectifiers Silizium Gleichrichter Nominal current – Nennstrom Ø3 ±0.05 3A 50…1000 V DO-15 DO-204AC 0.4 g Repetitive p

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www.vishay.com 1N5404GP, 1N5406GP, 1N5407GP, 1N5408GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier SUPERECTIFIER® DO-20

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