Schottky Barrier Rectifiers 1N5817-G Thru. 1N5819.
SEMTECH
1N5818W - Surface Mount Schottky Barrier Rectifier
1N5817W THRU 1N5819W Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 40 V Forward Current - 1 A PINNING PIN 1 2 1 DESCRIP.
Jingdao Microelectronics
1N5818WS - SCHOTTKY BARRIER RECTIFIERS
Jingdao Microelectronics SCHOTTKY BARRIER RECTIFIERS FEATURES • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protec.
NTE
1N5818 - Schottky Barrier Rectifier
1N5817, 1N5818, 1N5819 Schottky Barrier Rectifier DO−41 Type Package Absolute Maximum Ratings: Maximum Repetitive Reverse 1N5817 . . . . . . . . . . .
Kexin
1N5818WS - Schottky Diodes
SMD Type Schottky Diodes 1N5817WS ~ 1N5819WS TransDisiotodress Ƶ Features ƽ Low power loss, high efficiency ƽ High current capability ƽ Low forward.
YFD
1N5818S - 1.0AMP. SCHOTTKY BARRIER RECTIFIERS
ShenZhen YueFeiDa Electronics Technology Co.,Ltd 1N5817S THRU 1N5819S FEATURE 1.0AMP. SCHOTTKY BARRIER RECTIFIERS A-405 .High current capability ..
AiT Components
1N5818 - SCHOTTKY DIODES
AiT Components Inc. www.ait-components.com 1N5817~1N5819 SCHOTTKY DIODES SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS DESCRIPTION The 1N5817~1N5819 are.
Taiwan Semiconductor
1N5818 - Schottky Barrier Rectifiers
1N5817 – 1N5819 Taiwan Semiconductor 1A, 20V - 40V Schottky Barrier Rectifier FEATURES ● AEC-Q101 qualified available ● Low forward voltage drop ● G.
Fairchild Semiconductor
1N5818 - Schottky Barrier Rectifier
1N5817 - 1N5819 — Schottky Barrier Rectifier November 2010 1N5817 - 1N5819 Schottky Barrier Rectifier Features • 1.0 ampere operation at TA = 90°C wi.
Comchip
1N5818-G - Schottky Barrier Rectifiers
Schottky Barrier Rectifiers 1N5817-G Thru. 1N5819-G Reverse Voltage: 20 to 40 V Forward Current: 1.0 A RoHS Device Features -Metal-Semiconductor junc.
Multicomp
1N5818 - Power Diodes - Schottky
1N5810 Series Power Diodes - Schottky 1A Axial DO-41 Features: • Low forward voltage drop . • High current capability. • High reliability. • High su.
MCC
1N5818 - Schottky Barrier Rectifier
MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"#.
Diodes
1N5818 - 1.0A SCHOTTKY BARRIER RECTIFIER
Pb 1N5817 - 1N5819 1.0A SCHOTTKY BARRIER RECTIFIER Features Guard Ring Die Construction for Transient Protection Low-Power Loss, High Efficienc.
STMicroelectronics
1N5818 - Low drop power Schottky rectifier
1N5817, 1N5818, 1N5819 Low drop power Schottky rectifier Features ■ Very small conduction losses ■ Negligible switching losses ■ Extremely fast swit.
Hi-Sincerity Mocroelectronics
H1N5818 - 1.0AMP.SCHOTTKY BARRIER RECTIFIERS
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HL200101 Issued Date : 2000.01.15 Revised Date : 2001.12.06 Page No. : 1/3 H1N5817 thru H1N5819 1.0 .
CHINA BASE
1N5818W - 1A Surface Mount Schottky Barrier Diode
1N5817W-1N5819W 1A Surface Mount Schottky Barrier Diode PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 Absolute Maximum Ratings (Ta = 25 OC) Parame.
JGD
1N5818W - Surface Mount Schottky Barrier Rectifiers
Features * Reverse voltage - 20 to 40 V * Forward current - 1 A 1N5817W THRU 1N5819W Surface Mount Schottky Barrier Rectifiers A C B DE G F SOD-12.
Kexin
1N5818W - Schottky Barrier Diodes
SMD Type Schottky Diodes 1N5817W ~ 1N5819W TransDisiotodress Ƶ Features ƽ Low power loss, high efficiency ƽ High current capability ƽ Low forward v.
Sangdest Microelectronics
1N5818W - SCHOTTKY BARRIER DIODE
Technical Data Data Sheet N1756, Rev. - 1N5817W-1N5819W SCHOTTKY BARRIER DIODE Features: • Metal silicon junction, majority carrier conduction • Guard.
Rectron
1N5818W - SCHOTTKY BARRIER RECTIFIER
SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere Features • Metal silicon junction, majority carrier conduction • Guarding f.
