1N6 Datasheet | Specifications & PDF Download

FCP11N60 / FCPF11N60 — N-Channel SuperFET® MOSFET FCP11N60/FCPF11N60 March 2014 General Description SuperFET® MOSFET is Fairchild Semiconductor’s f

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HI-SINCERITY MICROELECTRONICS CORP. H01N60 Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termi

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MDF11N65B N-channel MOSFET 650V MDF11N65B N-Channel MOSFET 650V, 12A, 0.65Ω General Description These N-channel MOSFET are produced using advanced M

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11N65(F,B,H)S 11 Amps,650 Volts N-Channel Super Junction Power MOSFET FEATURE  11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A  Low gate charge  Low Ciss

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1N60 THRU 1N60P SMALL SIGNAL SCHOTTKY DIODE Reverse Voltage - 40 to 45 Volts Forward Current - 0.03 / 0.05 Ampere FEATURES ● Metal-on-silicon junctio

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MDF11N60 N-channel MOSFET 600V MDF11N60 N-Channel MOSFET 600V, 11A, 0.55Ω General Description The MDF11N60 uses advanced Magnachip’s MOSFET Technolo

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STD11N65M2, STP11N65M2, STU11N65M2 Datasheet N-channel 650 V, 0.60 Ω typ., 7 A MDmesh™ M2 Power MOSFET in DPAK, TO-220 and IPAK packages TAB 3 DPAK 1

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1N6626-1N6631 High-reliability discrete products and engineering services since 1977 ULTRA FAST RECTIFIERS FEATURES  Available as “HR” (high relia

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1N6626-1N6631 High-reliability discrete products and engineering services since 1977 ULTRA FAST RECTIFIERS FEATURES  Available as “HR” (high relia

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SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic av

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1N60PW, 1N60SW Gold Wire Bonding Diode FEATURES • High Voltage • Low Forward Voltage APPLICATIONS • For electronic calculator, etc. Absolute Maximum

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1N6626-1N6631 High-reliability discrete products and engineering services since 1977 ULTRA FAST RECTIFIERS FEATURES  Available as “HR” (high relia

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SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5102, REV. B.3 1N6324/US thru 1N6351/US StandZaErNd ER 500mW VOLTAGE REGULATOR AVAILABLE AS 1N, JAN

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N-Channel Trench Power MOSFET General Description The CSD01N650 combines advanced trench MOSFET technology with a low resistance package to provide ex

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STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 a

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