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Silan Microelectronics SVSP11N60D/F/S/FJD/T/KD2_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N60D/F/S/FJD/T/KD2 is an N

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SVS11N60D/F/S/FJ/T/KD2_Datasheet 11A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVS11N60D/F/S/FJ/T/KD2 is an N-channel enhancement mode high voltage

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Silan Microelectronics SVSP11N60D/F/S/FJD/T/KD2_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N60D/F/S/FJD/T/KD2 is an N

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Silan Microelectronics SVSP11N60D/F/S/FJD/T/KD2_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N60D/F/S/FJD/T/KD2 is an N

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SVF1N60AM/MJ/B/D/F/H_Datasheet 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF1N60AM/MJ/B/D/F/H is an N-channel enhancement mode power MOS field eff

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DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS 1.5KE6.8 THRU 1.5KE440CA TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE RANGE - 6

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1N6102US thru 1N6137US 1N6103AUS thru 1N6137AUS 500W Bipolar Transient Voltage Suppressor Surface Mount (US) POWER DISCRETES Description Features

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1N6373 - 1N6381 Series (ICTE-5 - ICTE-36, MPTE-5 - MPTE-45) 1500 Watt Peak Power Mosorb™ Zener Transient Voltage Suppressors Unidirectional* Mosorb de

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• AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/240 • SILICON RECTIFIER • METALLURGICALLY BONDED 1N645UR-1 CDLL645 MAXIMUM RATINGS Operating

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FCP11N60 / FCPF11N60 — N-Channel SuperFET® MOSFET FCP11N60/FCPF11N60 March 2014 General Description SuperFET® MOSFET is Fairchild Semiconductor’s f

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1N645 General Purpose Silicon Rectifier Description: The 1N645 is a general purpose silicon rectifier in a DO−35 case designed for use in power appli

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A Microsemi Company 1N6510 JANTX, JANTXV Phone: 617-924-9280 Fax: 617-924-1235 580 Pleasant St. Watertown, MA 02472 DIODE ARRAY PRODUCT SPECIFICATI

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SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic av

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CEP01N6G/CEB01N6G CEF01N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP01N6G CEB01N6G CEF01N6G VDSS 600V 600V 600V RDS(ON)

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1N6267A Series TVS Diodes 1500 Watt Zener Transient Voltage Suppressors Pb Maximum Ratings and Thermal Characteristics Rating Peak Power Dissipati

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SVS11N60D/F/S/FJ/T/KD2_Datasheet 11A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVS11N60D/F/S/FJ/T/KD2 is an N-channel enhancement mode high voltage

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11N65(F,B,H)S 11 Amps,650 Volts N-Channel Super Junction Power MOSFET FEATURE  11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A  Low gate charge  Low Ciss

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LSD11N65 LonFET Lonten N-channel 650V, 11A, 0.35Ω LonFETTM Power MOSFET Description LonFETTM Power MOSFET is fabricated using advanced super junction

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LSC11N65 LonFET Lonten N-channel 650V, 11A, 0.35Ω LonFETTM Power MOSFET Description LonFETTM Power MOSFET is fabricated using advanced super junction

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Silan Microelectronics SVSP11N65D/F/S/FJD/K/TD2_Datasheet 11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N65D/F/S/FJD/K/TD2 is an N

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