1N6 Datasheet | Specifications & PDF Download

Silan Microelectronics SVSP11N60D/F/S/FJD/T/KD2_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N60D/F/S/FJD/T/KD2 is an N

(15 views)

SVS11N60D/F/S/FJ/T/KD2_Datasheet 11A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVS11N60D/F/S/FJ/T/KD2 is an N-channel enhancement mode high voltage

(8 views)

Silan Microelectronics SVSP11N60D/F/S/FJD/T/KD2_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N60D/F/S/FJD/T/KD2 is an N

(8 views)

Silan Microelectronics SVSP11N60D/F/S/FJD/T/KD2_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N60D/F/S/FJD/T/KD2 is an N

(7 views)

SVF1N60AM/MJ/B/D/F/H_Datasheet 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF1N60AM/MJ/B/D/F/H is an N-channel enhancement mode power MOS field eff

(5 views)

FCP11N60 / FCPF11N60 — N-Channel SuperFET® MOSFET FCP11N60/FCPF11N60 March 2014 General Description SuperFET® MOSFET is Fairchild Semiconductor’s f

(4 views)

SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic av

(4 views)

DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS 1.5KE6.8 THRU 1.5KE440CA TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE RANGE - 6

(3 views)

1N6036-1N6072A High-reliability discrete products and engineering services since 1977 TRANSIENT VOLTAGE SUPPRESSOR DIODES FEATURES  Available as “

(3 views)

1N6102US thru 1N6137US 1N6103AUS thru 1N6137AUS 500W Bipolar Transient Voltage Suppressor Surface Mount (US) POWER DISCRETES Description Features

(3 views)

1N6373 - 1N6381 Series (ICTE-5 - ICTE-36, MPTE-5 - MPTE-45) 1500 Watt Peak Power Mosorb™ Zener Transient Voltage Suppressors Unidirectional* Mosorb de

(3 views)

• AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/240 • SILICON RECTIFIER • METALLURGICALLY BONDED 1N645UR-1 CDLL645 MAXIMUM RATINGS Operating

(3 views)

Silicon N-Channel Power MOSFET CS1N60 B3R ○R General Description： CS1N60 B3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

(3 views)

WML11N60C2, WMK11N60C2, WMM11N60C2 WMN11N60C2, WMP11N60C2, WMO11N60C2 600V 0.47Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd gen

(3 views)

WML11N60C2, WMK11N60C2, WMM11N60C2 WMN11N60C2, WMP11N60C2, WMO11N60C2 600V 0.47Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd gen

(3 views)

600V N-Channel MOSFETs PDL01N60 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technolo

(3 views)

1N645 General Purpose Silicon Rectifier Description: The 1N645 is a general purpose silicon rectifier in a DO−35 case designed for use in power appli

(3 views)

1N645-1 FEATURES • 1N645-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/240 • SILICON RECTIFIER • METALLURGICALLY BONDED • HERMETICALLY SEAL

(3 views)

Silicon N-Channel Power MOSFET CS1N60 A3H ○R General Description： VDSS 600 V CS1N60 A3H, the silicon N-channel Enhanced ID 0.8 A VDMOSFETs, is

(3 views)

SEMICONDUCTOR TECHNICAL DATA KPS11N65F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This Super Junction MOSFET has better characterist

(3 views)