1N6 Datasheet | Specifications & PDF Download

Silan Microelectronics SVSP11N60D/F/S/FJD/T/KD2_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N60D/F/S/FJD/T/KD2 is an N

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SVS11N60D/F/S/FJ/T/KD2_Datasheet 11A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVS11N60D/F/S/FJ/T/KD2 is an N-channel enhancement mode high voltage

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Silan Microelectronics SVSP11N60D/F/S/FJD/T/KD2_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N60D/F/S/FJD/T/KD2 is an N

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Silan Microelectronics SVSP11N60D/F/S/FJD/T/KD2_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N60D/F/S/FJD/T/KD2 is an N

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SVF1N60AM/MJ/B/D/F/H_Datasheet 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF1N60AM/MJ/B/D/F/H is an N-channel enhancement mode power MOS field eff

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FCP11N60 / FCPF11N60 — N-Channel SuperFET® MOSFET FCP11N60/FCPF11N60 March 2014 General Description SuperFET® MOSFET is Fairchild Semiconductor’s f

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SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic av

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DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS 1.5KE6.8 THRU 1.5KE440CA TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE RANGE - 6

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1N6036-1N6072A High-reliability discrete products and engineering services since 1977 TRANSIENT VOLTAGE SUPPRESSOR DIODES FEATURES  Available as “

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1N6102US thru 1N6137US 1N6103AUS thru 1N6137AUS 500W Bipolar Transient Voltage Suppressor Surface Mount (US) POWER DISCRETES Description Features

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1N6373 - 1N6381 Series (ICTE-5 - ICTE-36, MPTE-5 - MPTE-45) 1500 Watt Peak Power Mosorb™ Zener Transient Voltage Suppressors Unidirectional* Mosorb de

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• AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/240 • SILICON RECTIFIER • METALLURGICALLY BONDED 1N645UR-1 CDLL645 MAXIMUM RATINGS Operating

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Silicon N-Channel Power MOSFET CS1N60 B3R ○R General Description： CS1N60 B3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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WML11N60C2, WMK11N60C2, WMM11N60C2 WMN11N60C2, WMP11N60C2, WMO11N60C2 600V 0.47Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd gen

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600V N-Channel MOSFETs PDL01N60 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technolo

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1N645 General Purpose Silicon Rectifier Description: The 1N645 is a general purpose silicon rectifier in a DO−35 case designed for use in power appli

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1N645-1 FEATURES • 1N645-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/240 • SILICON RECTIFIER • METALLURGICALLY BONDED • HERMETICALLY SEAL

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Silicon N-Channel Power MOSFET CS1N60 A3H ○R General Description： VDSS 600 V CS1N60 A3H, the silicon N-channel Enhanced ID 0.8 A VDMOSFETs, is

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SEMICONDUCTOR TECHNICAL DATA KPS11N65F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This Super Junction MOSFET has better characterist

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FCPF11N60F — N-Channel SuperFET® FRFET® MOSFET FCPF11N60F N-Channel SuperFET® FRFET® MOSFET 600 V, 11 A, 380 mΩ November 2013 Features • 600 V @ TJ

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