Toshiba Semiconductor
1SS196 - Silicon Epitaxial Planar Type Diode
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS196
Ultra High Speed Switching Application
1SS196
Unit: mm
AEC-Q101 Qualified (Note1) Small packa
Rating:
1
★
(7 votes)
WEJ
1SS196 - DIODE
RoHS
1SS196 SWITCHING DIODE
SOT-23 Plastic-Encapsulate DIODE
DFeatures TPower dissipation
PD : 150 mW (Tamb=25oC)
.,LForward Current IF : 100 mA Re
Rating:
1
★
(6 votes)
WON-TOP
1SS196 - SURFACE MOUNT FAST SWITCHING DIODE
® WON-TOP ELECTRONICS
1SS196
SURFACE MOUNT FAST SWITCHING DIODE
Pb
Features
High Conductance
Fast Switching Surface Mount Package Ideally Suit
Rating:
1
★
(4 votes)
MCC
1SS196 - Switching Diodes
MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth # $
% #
Rating:
1
★
(4 votes)
LGE
1SS196 - Switching Diodes
1. N.C. 2. ANODE 3. CATHODE
Features
Low forward voltage
: VF(3)=0.9V(typ.)
Fast reverse recovery time : trr=1.6ns(typ.)
MARKING: G3
Maximum
Rating:
1
★
(4 votes)
Kexin
1SS196 - ULTRA HIGH SPEED SWITCHING DIODE
SMD Type
Diodes
ULTRA HIGH SPEED SWITCHING APPLICATION 1SS196
Features
Small Package Low forward voltage :VF(3) = 0.9 V(Typ.) Fast Reverse Recovery
Rating:
1
★
(4 votes)
JCET
1SS196 - SWITCHING DIODE
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
1SS196
Switching Diode
FEATURES Low forward voltage Fast rever
Rating:
1
★
(3 votes)
HOTTECH
1SS196 - SWITCHING DIODES
Plastic-Encapsulate Diodes
SWITCHING DIODES
FEATURES
Low forward voltage : VF(3)=0.9V(typ.) Fast reverse recovery time : trr=1.6ns(typ.)
1SS196
MAR
Rating:
1
★
(3 votes)
WEITRON
1SS196 - Surface Mount Switching Diodes
Surface Mount Switching Diodes
P b Lead(Pb)-Free
Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * Hig
Rating:
1
★
(3 votes)
RECTRON
1SS196 - SWITCHING DIODE
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 SWITCHING DIODE
1SS196
FEATURES
* Power dissipation PD: 150 mW(Tamb=25OC)
* Forward current IF:
Rating:
1
★
(3 votes)
SEMTECH
1SS196 - SILICON EPITAXIAL PLANAR DIODE
1SS196
SILICON EPITAXIAL PLANAR DIODE
Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance
Applicatio
Rating:
1
★
(3 votes)
GME
1SS196 - Surface mount switching diode
Production specification
Surface mount switching diode
FEATURES
Low forward voltage VF(3)=0.9V(typ).
Pb
Lead-free
Small total capacitance:CT=
Rating:
1
★
(2 votes)