1SS196 Datasheet | Specifications & PDF Download

1SS196 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applicatio

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Production specification Surface mount switching diode FEATURES  Low forward voltage VF(3)=0.9V(typ). Pb Lead-free  Small total capacitance:CT=

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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SMD Type Diodes ULTRA HIGH SPEED SWITCHING APPLICATION 1SS196 Features Small Package Low forward voltage :VF(3) = 0.9 V(Typ.) Fast Reverse Recovery

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE 1SS196 FEATURES * Power dissipation PD: 150 mW(Tamb=25OC) * Forward current IF:

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS196 Ultra High Speed Switching Application 1SS196 Unit: mm  AEC-Q101 Qualified (Note1)  Small packa

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS196 Switching Diode FEATURES Low forward voltage Fast rever

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Plastic-Encapsulate Diodes SWITCHING DIODES FEATURES Low forward voltage : VF(3)=0.9V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) 1SS196 MAR

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RoHS 1SS196 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Re

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Surface Mount Switching Diodes P b Lead(Pb)-Free Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * Hig

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® WON-TOP ELECTRONICS 1SS196 SURFACE MOUNT FAST SWITCHING DIODE Pb Features  High Conductance  Fast Switching  Surface Mount Package Ideally Suit

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1. N.C. 2. ANODE 3. CATHODE Features — Low forward voltage : VF(3)=0.9V(typ.) — Fast reverse recovery time : trr=1.6ns(typ.) MARKING: G3 Maximum

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