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No Part Number Description Manufacture PDF
13 1SS196 SILICON EPITAXIAL PLANAR DIODE

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS196 1SS196 Ultra High-Speed Switching Applications Unit: mm z Small package: SC-59 z Low forward voltage: VF (3) = 0.9 V (typ.) z Fast reverse recove
Toshiba Semiconductor
Toshiba Semiconductor
1SS196 pdf
12 1SS196 SWITCHING DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS196 Switching Diode FEATURES Low forward voltage Fast reverse recovery time MARKING: G3 G3 SOT-23 1 3 2 M
JCET
JCET
1SS196 pdf
11 1SS196 SWITCHING DIODES

Plastic-Encapsulate Diodes SWITCHING DIODES FEATURES Low forward voltage : VF(3)=0.9V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) 1SS196 MARKING: G3 MAXIMUM RATINGS (TA=25 unless otherwise
HOTTECH
HOTTECH
1SS196 pdf
10 1SS196 Surface mount switching diode

Production specification Surface mount switching diode FEATURES  Low forward voltage VF(3)=0.9V(typ). Pb Lead-free  Small total capacitance:CT=0.9pF(typ).  Fast reverse recovery time:tr
GME
GME
1SS196 pdf
9 1SS196 SURFACE MOUNT FAST SWITCHING DIODE

® WON-TOP ELECTRONICS 1SS196 SURFACE MOUNT FAST SWITCHING DIODE Pb Features  High Conductance  Fast Switching  Surface Mount Package Ideally Suited for Automatic Insertion  For General
WON-TOP
WON-TOP
1SS196 pdf
8 1SS196 DIODE

RoHS 1SS196 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Reverse Voltage VR : 80V OOperating and storage junc
WEJ
WEJ
1SS196 pdf
7 1SS196 Surface Mount Switching Diodes

Surface Mount Switching Diodes P b Lead(Pb)-Free Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose Switching Appl
WEITRON
WEITRON
1SS196 pdf
6 1SS196 Switching Diodes

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS196 Features • Low Leakage Current • Su
MCC
MCC
1SS196 pdf
5 1SS196 Switching Diodes

1. N.C. 2. ANODE 3. CATHODE Features — Low forward voltage : VF(3)=0.9V(typ.) — Fast reverse recovery time : trr=1.6ns(typ.) MARKING: G3 Maximum Ratings @TA=25℃ Parameter Non-Repetitive Peak
LGE
LGE
1SS196 pdf
4 1SS196 SWITCHING DIODE

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE 1SS196 FEATURES * Power dissipation PD: 150 mW(Tamb=25OC) * Forward current IF: 100 mA * Reverse voltage VR: 80 V * Operating and
RECTRON
RECTRON
1SS196 pdf
3 1SS196 SILICON EPITAXIAL PLANAR DIODE

1SS196 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applications • Ultra high speed switching applicat
SEMTECH
SEMTECH
1SS196 pdf
2 1SS196 ULTRA HIGH SPEED SWITCHING DIODE

SMD Type Diodes ULTRA HIGH SPEED SWITCHING APPLICATION 1SS196 Features Small Package Low forward voltage :VF(3) = 0.9 V(Typ.) Fast Reverse Recovery Time :trr = 1.6 ns(Typ.) Small Total Capacitance
Kexin
Kexin
1SS196 pdf


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