| No |
Part Number |
Description |
Manufacture |
PDF |
| 3 |
1SS302 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
www.DataSheet.co.kr
1SS302
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS302
Ultra High Speed Switching Applications
z Small package z Low forward voltage z Small total capacitance : SC-70 : VF (3) |
Toshiba Semiconductor
|
|
| 2 |
1SS302 |
ULTRA HIGH SPEED SWITCHING APPLICATIONS
www.DataSheet.co.kr
SMD Type
Diodes
ULTRA HIGH SPEED SWITCHING APPLICATIONS 1SS302
Features
Low forward voltage:VF(3) = 0.9 V(Typ) Fast reverse recovery time:trr = 1.6 ns (Typ) Small total capacit |
Guangdong Kexin Industrial
|
|
| 1 |
1SS302A |
Silicon Epitaxial Planar Diode
Switching Diodes Silicon Epitaxial Planar
1SS302A
1. Applications
• Ultra-High-Speed Switching
2. Features
(1) Fast reverse recovery time : trr = 1.6 ns (typ.) (2) AEC-Q101 qualified
3. Packaging an |
Toshiba
|
|
