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1SS385F Matched Datasheet

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No Part Number Description Manufacture PDF
2 1SS385F DIODE (HIGH SPEED SWITCHING)

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching 1SS385F Unit in mm Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Ultra-small package Maximum Ratings (Ta = 25°
Toshiba Semiconductor
Toshiba Semiconductor
1SS385F pdf
1 1SS385FV Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV 1SS385FV High-Speed Switching Applications z Low forward voltage: VF = 0.23 V (typ.) @IF = 5 mA z Ultra-small package Absolute Maximum
Toshiba
Toshiba
1SS385FV pdf


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