TOSHIBA Diode Silicon Epitaxial Schottky Barrier T.
Toshiba Semiconductor
1SS396 - Silicon Epitaxial Schottky Barrier Type Diode
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 1SS396 Low Voltage High Speed Switching Unit: mm ⚫ AEC-Q101 qualified (Note 1) ⚫ Sma.