• Part: 1SS396
  • Description: Silicon Epitaxial Schottky Barrier Type Diode
  • Manufacturer: Toshiba
  • Size: 414.83 KB
Download 1SS396 Datasheet PDF
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Datasheet Summary

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Unit: mm - AEC-Q101 qualified (Note 1) - Small package : SC-59 - Low forward voltage : VF (3) = 0.54V (typ.) - Low reverse current : IR = 5μA (max.) Note 1: For detail information, please contact our...