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1SS396 - Silicon Epitaxial Schottky Barrier Type Diode

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Part number 1SS396
Manufacturer Toshiba Semiconductor
File Size 414.83 KB
Description Silicon Epitaxial Schottky Barrier Type Diode
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 1SS396 Low Voltage High Speed Switching Unit: mm ⚫ AEC-Q101 qualified (Note 1) ⚫ Small package : SC-59 ⚫ Low forward voltage : VF (3) = 0.54V (typ.) ⚫ Low reverse current : IR = 5μA (max.) Note 1: For detail information, please contact our sales.
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