1SS391
1SS391 is Silicon Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Low Voltage High Speed Switching
- Low forward voltage: VF (2) = 0.23V (typ.)
- Small package: SC-61
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
- m A
Average forward current
- m A
Surge current (10ms)
IFSM
1-
1. CATHODE 1
Power dissipation Junction temperature Storage temperature range Operating temperature range
- m W
Tj
°C
Tstg
- 55 to 125
°C
Topr
- 40 to 100 °C
2. CATHODE 2 3. ANODE 2 4. ANODE 1
JEDEC JEITA
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