| Part number | 1SS391 |
|---|---|
| Datasheet | 1SS391_ToshibaSemiconductor.pdf |
| File Size | 558.35 KB |
| Manufacturer | Toshiba |
| Description | Silicon Diode |
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching Low forward voltage: VF (2) = 0.23V (typ.) Small package: mm Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current IO 100 mA Surge current (10ms) IFSM 1 A.
| Part Number | Description |
|---|---|
| 1SS392 | Silicon Diode |
| 1SS393 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS394 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS395 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS396 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS397 | Silicon Epitaxial Planar Type Diode |
| 1SS398 | Silicon Epitaxial Planar Type Diode |
| 1SS399 | Silicon Epitaxial Planar Type Diode |
| 1SS300 | Silicon Epitaxial Planar Type Diode |
| 1SS301 | Silicon Epitaxial Planar Type Diode |
