Datasheet4U Logo Datasheet4U.com

1SS391 - Silicon Diode

📥 Download Datasheet

Datasheet preview – 1SS391

Datasheet Details

Part number 1SS391
Manufacturer Toshiba Semiconductor
File Size 558.35 KB
Description Silicon Diode
Datasheet download datasheet 1SS391 Datasheet
Additional preview pages of the 1SS391 datasheet.

📁 Similar Datasheet

  • 1SS390 - Band switching diode (Rohm)
  • 1SS390 - Band swithing diode (SEMTECH)
  • 1SS390 - SURFACE MOUNT PIN DIODE (PAN JIT)
  • 1SS390SMFH - Band Switching Diodes (ROHM)
  • 1SS300 - ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES (Kexin)
  • 1SS301 - SUPER HIGH SPEED SWITCHING DIODE (XIN SEMICONDUCTOR)
  • 1SS301 - ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES (Kexin)
  • 1SS302 - ULTRA HIGH SPEED SWITCHING APPLICATIONS (Guangdong Kexin Industrial)
  • 1SS302A - Silicon Epitaxial Planar Switching Diodes (Toshiba)
  • 1SS307E - Diode (Toshiba)
Other Datasheets by Toshiba Semiconductor
  • 1SS392 - Silicon Diode
  • 1SS393 - Silicon Diode
  • 1SS394 - Silicon Diode
  • 1SS395 - Silicon Diode
  • 1SS396 - Silicon Epitaxial Schottky Barrier Type Diode
  • 1SS397 - Silicon Epitaxial Planar Type Diode
  • 1SS398 - Silicon Epitaxial Planar Type Diode
  • 1SS399 - Silicon Epitaxial Planar Type Diode

Full PDF Text Transcription

Click to expand full text
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching  Low forward voltage: VF (2) = 0.23V (typ.)  Small package: SC-61 1SS391 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 1* A 1. CATHODE 1 Power dissipation Junction temperature Storage temperature range Operating temperature range P 150 * mW Tj 125 °C Tstg −55 to 125 °C Topr −40 to 100 °C 2. CATHODE 2 3. ANODE 2 4. ANODE 1 JEDEC JEITA SMQ ― SC-61 Note: Using continuously under heavy loads (e.g.
Published: |