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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS391
Low Voltage High Speed Switching
Low forward voltage: VF (2) = 0.23V (typ.) Small package: SC-61
1SS391
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
15
V
Reverse voltage
VR
10
V
Maximum (peak) forward current
IFM
200 *
mA
Average forward current
IO
100 *
mA
Surge current (10ms)
IFSM
1*
A
1. CATHODE 1
Power dissipation Junction temperature Storage temperature range Operating temperature range
P
150 *
mW
Tj
125
°C
Tstg
−55 to 125
°C
Topr
−40 to 100 °C
2. CATHODE 2 3. ANODE 2 4. ANODE 1
JEDEC JEITA
SMQ
― SC-61
Note: Using continuously under heavy loads (e.g.
1SS391 Datasheet
