Datasheet Summary
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
High Speed Switching Application
Unit: mm z Small package z Low forward voltage: VF (2) = 0.23V (typ.) @IF =...
- Part: 1SS395
- Description: Silicon Epitaxial Schottky Barrier Type Diode
- Manufacturer: Toshiba
- Size: 180.74 KB
Other 1SS395 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Kexin Semiconductor |
1SS395 | HIGH SPEED SWITCHING DIODE |