1SS393 - Silicon Diode

Toshiba Semiconductor

Datasheet Details

Part number	1SS393
Manufacturer	Toshiba Semiconductor
File Size	198.93 KB
Description	Silicon Diode
Datasheet	1SS393 Datasheet
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS393 High Speed Switching Application 1SS393 Unit: mm z Low forward voltage z Low reverse current z Small package : VF (3) = 0.54V (typ.) : IR = 5μA (max) : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 * mA Average forward current Surge current (10ms) Power dissipation IO IFSM P 100 * 1* 100 * mA A mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C JEDEC ― Operating temperature range Topr −40 to 100 °C JEITA SC-70 Note: Using continuously under heavy loads (e.g.

Published: Mar 23, 2005 |