1SS397 Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS397 High Voltage, High Speed Switching Applications 1SS397 Unit: SC-70 Low forward voltage : VF = 1.0 V (typ.) High voltage.
| Part number | 1SS397 |
|---|---|
| Datasheet | 1SS397_ToshibaSemiconductor.pdf |
| File Size | 615.66 KB |
| Manufacturer | Toshiba |
| Description | Silicon Epitaxial Planar Type Diode |
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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS397 High Voltage, High Speed Switching Applications 1SS397 Unit: SC-70 Low forward voltage : VF = 1.0 V (typ.) High voltage.
| Part Number | Description |
|---|---|
| 1SS391 | Silicon Diode |
| 1SS392 | Silicon Diode |
| 1SS393 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS394 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS395 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS396 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS398 | Silicon Epitaxial Planar Type Diode |
| 1SS399 | Silicon Epitaxial Planar Type Diode |
| 1SS300 | Silicon Epitaxial Planar Type Diode |
| 1SS301 | Silicon Epitaxial Planar Type Diode |