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1SS397 - Silicon Epitaxial Planar Type Diode

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Part number 1SS397
Manufacturer Toshiba Semiconductor
File Size 615.66 KB
Description Silicon Epitaxial Planar Type Diode
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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS397 High Voltage, High Speed Switching Applications 1SS397 Unit: mm  Small package : SC-70  Low forward voltage : VF = 1.0 V (typ.)  High voltage : VR = 400 V (min)  Fast reverse recovery time : trr = 0.5 μs (typ.)  Small total capacitance : CT = 2.5 pF (typ.
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