1SS397
1SS397 is Silicon Epitaxial Planar Type Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Planar Type
High Voltage, High Speed Switching Applications
Unit: mm
- Small package
: SC-70
- Low forward voltage
: VF = 1.0 V (typ.)
- High voltage
: VR = 400 V (min)
- Fast reverse recovery time : trr = 0.5 μs (typ.)
- Small total capacitance : CT = 2.5 p F (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
300 m A
Average forward current
100 m A
Surge current (10ms)
IFSM
Power dissipation
PD (Note 1, 3)
200 m W
PD (Note 2)
Junction temperature
Tj (Note 1)
°C
Tj (Note...
