Datasheet Summary
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
High Speed Switching Application
Unit: mm z Low forward voltage z Low reverse current z Small package
: VF (3) = 0.54V (typ.) : IR = 5μA (max) :...
- Part: 1SS392
- Description: Silicon Diode
- Manufacturer: Toshiba
- Size: 199.86 KB
Other 1SS392 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Kexin Semiconductor |
1SS392 | LOW VOLTAGE HIGH SPEED SWITCHING DIODE |