1SS392 - Silicon Diode

Toshiba Semiconductor

Datasheet Details

Part number	1SS392
Manufacturer	Toshiba Semiconductor
File Size	199.86 KB
Description	Silicon Diode
Datasheet	1SS392 Datasheet
Additional preview pages of the 1SS392 datasheet.

📁 Similar Datasheet

1SS390 - Band switching diode (Rohm)
1SS390 - Band swithing diode (SEMTECH)
1SS390 - SURFACE MOUNT PIN DIODE (PAN JIT)
1SS390SMFH - Band Switching Diodes (ROHM)
1SS300 - ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES (Kexin)
1SS301 - SUPER HIGH SPEED SWITCHING DIODE (XIN SEMICONDUCTOR)
1SS301 - ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES (Kexin)
1SS302 - ULTRA HIGH SPEED SWITCHING APPLICATIONS (Guangdong Kexin Industrial)
1SS302A - Silicon Epitaxial Planar Switching Diodes (Toshiba)
1SS307E - Diode (Toshiba)

Other Datasheets by Toshiba Semiconductor

1SS391 - Silicon Diode
1SS393 - Silicon Diode
1SS394 - Silicon Diode
1SS395 - Silicon Diode
1SS396 - Silicon Epitaxial Schottky Barrier Type Diode
1SS397 - Silicon Epitaxial Planar Type Diode
1SS398 - Silicon Epitaxial Planar Type Diode
1SS399 - Silicon Epitaxial Planar Type Diode

Full PDF Text Transcription

Click to expand full text

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application 1SS392 Unit: mm z Low forward voltage z Low reverse current z Small package : VF (3) = 0.54V (typ.) : IR = 5μA (max) : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 * mA Average forward current Surge current (10ms) Power dissipation IO IFSM P 100 * 1* 150 * mA A mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C JEDEC TO-236MOD Operating temperature range Topr −40 to 100 °C JEITA SC-59 Note: Using continuously under heavy loads (e.g.

Published: Mar 23, 2005 |