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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS392
High Speed Switching Application
1SS392
Unit: mm
z Low forward voltage z Low reverse current z Small package
: VF (3) = 0.54V (typ.) : IR = 5μA (max) : SC-59
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
45 V
Reverse voltage
VR 40 V
Maximum (peak) forward current
IFM
300 *
mA
Average forward current Surge current (10ms) Power dissipation
IO IFSM
P
100 * 1*
150 *
mA A mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55 to 125
°C
JEDEC
TO-236MOD
Operating temperature range
Topr
−40 to 100
°C
JEITA
SC-59
Note: Using continuously under heavy loads (e.g.
1SS392 Datasheet
