1z20 Datasheet | Specifications & PDF Download

MM1Z2V0B - MM1Z39B VZ : 2.0 to 39 V PD : 500 mW FEATURES : * Total Power Dissipation 500 mW * Small Plastic Package suitable for surface mounted desig

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MM1Z2V0~MM1Z75 SILICON PLANAR ZENER DIODES Features • Total power dissipation: max. 500 mW • Small plastic package suitable for surface mounted design

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MM1Z2V0 - MM1Z75 3RZHU'LVVLSDWLRQ- P: 9ROWDJH 5DQJH  0 WR  9 S,/,&21 Z(1(5 D,2'(6 FEATURES ƒ7RWDOSRZHUGLVVLSDWLRQ 0D[P: ƒ:L

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SILICON PLANAR ZENER DIODES Features • Total power dissipation: max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance ap

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www.eicsemi.com MM1Z2V4 - MM1Z75 VZ : 2.4 to 75 V PD : 500 mW FEATURES : * Total Power Dissipation 500 mW * Wide Zener Reverse Voltage Range 2.4 V to

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MM1Z2V0~MM1Z120 SILICON PLANAR ZENER DIODES Silicon planar zener diode in a small plastic SMD SOD-123 package Features Total power dissipation: max. 5

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R SEMICONDUCTOR MM1Z2V0 THRU MM1Z120 0.5W SILICON PLANAR ZENER DIODES FEATURES Total power dissipation:max.500 mW Small plastic package suitable fo

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SMD Type Transistors Zener Diodes MM1Z2V0~MM1Z75 (KM1Z2V0~KM1Z75) ■ Features ● Total power dissipation: max. 500 mW ● Tolerance approximately ± 5%

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MM1Z2V0 thru MM1Z120 SILICON PLANAR ZENER DIODES Silicon planar zener diode in a small plastic SMD SOD-123 package ® Pb Free Plating Product Feature

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Hall Effect Current Sensors L01Z***S05 Series Features: • • • • • Open Loop type Printed circuit board mounting Unipolar power supply Aperture for cab

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1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSOR

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C1Z3.3B THRU C1Z91B SILICON ZENER DIODE 3.3 VOLTS THRU 91 VOLTS 1.0 W, 5% TOLERANCE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICON

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Features • VRRM= 150V IF(AV)=2x 10A • Low Power Loss and High Efficiency • High Surge Capability • Low Leakage Current • Low Forward Voltage Drop • Le

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SMD Type Transistors Zener Diodes MM1Z2V0~MM1Z75 (KM1Z2V0~KM1Z75) ■ Features ● Total power dissipation: max. 500 mW ● Tolerance approximately ± 5%

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1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSOR

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RU1Z200Q N-Channel Advanced Power MOSFET Features • 150V/200A, RDS (ON) =5.5mΩ(Typ.)@VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability

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