RU1Z200Q Datasheet - Ruichips

RU1Z200Q N-Channel Advanced Power MOSFET

G DS TO247 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μ.

RU1Z200Q Features

* 150V/200A, RDS (ON) =5.5mΩ(Typ.)@VGS=10V

* Ultra Low On-Resistance

* Exceptional dv/dt capability

* Fast Switching and Fully Avalanche Rated

* 100% avalanche tested

* 175°C Operating Temperature

* Lead Free and Green Devices Available (RoHS C

RU1Z200Q Datasheet (398.68 KB)

RU1Z200Q Datasheet Preview — Preview of RU1Z200Q PDF

Datasheet Details

Part number:

RU1Z200Q

Manufacturer:

Ruichips

File Size:

398.68 KB

Description:

N-channel advanced power mosfet.

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RU1Z200Q N-Channel Advanced Power MOSFET Ruichips

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