RU1Z200Q Datasheet (Ruichips) - N-Channel Advanced Power MOSFET

RU1Z200Q, N-Channel Advanced Power MOSFET

G DS TO247 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μ

RU1Z200Q Features

* 150V/200A, RDS (ON) =5.5mΩ(Typ.)@VGS=10V

* Ultra Low On-Resistance

* Exceptional dv/dt capability

* Fast Switching and Fully Avalanche Rated

* 100% avalanche tested

* 175°C Operating Temperature

* Lead Free and Green Devices Available (RoHS C