2-Megabit Datasheet | Specifications & PDF Download

www.DataSheet4U.com EN25F16 EN25F16 16 Megabit Serial Flash Memory with 4Kbytes Uniform Sector FEATURES • Single power supply operation - Full volt

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XM25QH128A XM25QH128A preliminary 128 Megabit 3V Serial Flash Memory with 4Kbyte Uniform Sector FEATURES  Single power supply operation - Full vo

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HY29F400 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement

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CAT28F020 2 Megabit CMOS Flash Memory Licensed Intel second source FEATURES s Fast read access time: 90/120 ns s Low power CMOS dissipation: – Activ

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Features • Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time - 120 ns • Internal Program Control and Tim

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Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture • • • • • • •

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Features • 16-Mbit Flash and 2-Mbit/4-Mbit SRAM • Single 66-ball 8 mm x 10 mm x 1.2 mm CBGA Package • 2.7V to 3.3V Operating Voltage Flash • 2.7V to

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Features • Single 2.7V - 3.6V Supply • Serial Interface Architecture • Page Program Operation • • • • • • • • • • • – Single Cycle Reprogram (Erase an

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Features • Single Voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time - 55 ns • Internal Program Control and Timer • Sector Archite

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Features • Single Voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time - 55 ns • Internal Program Control and Timer • Sector Archite

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Features • Single-voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time - 55 ns • Internal Program Control and Timer • Sector Archite

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Features • Single-voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time - 55 ns • Internal Program Control and Timer • Sector Archite

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Features • Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 45 ns • Internal Program Control and Timer • 8K bytes Boot Bl

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Features • Single Voltage Operation – 5V Read – 5V Programming • Fast Read Access Time - 55 ns • Internal Erase/Program Control • Sector Architecture

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FINAL Am28F020 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — Access times as fa

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PRELIMINARY Am29LV400 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS s Single powe

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AT29BV020 Features • • • • • • • • • • • • • Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Software Protected Programmi

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Features • • • • • • • • • • • • Single 2.5V - 3.6V or 2.7V - 3.6V Supply Serial Peripheral Interface (SPI) Compatible 20 MHz Max Clock Frequency Page

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Features • • • • • • • • • • Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 45 ns Internal Program Control and Timer

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HY29F002T 2 Megabit (256K x 8), 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n

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