2.65W Datasheet | Specifications & PDF Download

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Date: - 15th October, 2013 Data Sheet Issue:- P2 Phase Control Thyristor Types N0465WN140 to N0465WN160 Absolute Maximum Ratings VDRM VDSM VRRM VRS

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Date: - 15th October, 2013 Data Sheet Issue:- P2 Phase Control Thyristor Types N0465WN140 to N0465WN160 Absolute Maximum Ratings VDRM VDSM VRRM VRS

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Diode Web: www.topdiode.com Mail: info@topdiode.com Your Reliable Components Partner Skype: topdiode WhatsApp/WeChat: +86 13712073035 N-CHANNEL IGB

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N N-CHANNEL IGBT R JT075N065WED MAIN CHARACTERISTICS IC VCES Vcesat-typ 75A 650V 1.7V Package  UPS APPLICATIONS  General purpose inverte

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Rev. 0.9, Sep. 2018 K4A4G165WF Preliminary 4Gb F-die DDR4 SDRAM x16 only 96FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.2V datasheet SA

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TK14G65W MOSFETs Silicon N-Channel MOS (DTMOS) TK14G65W 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-

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TK14A65W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK14A65W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Fast reverse r

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MOSFETs Silicon N-Channel MOS (DTMOS) TK8P65W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON)

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isc N-Channel MOSFET Transistor TK11P65W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.44Ω. ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V,

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R MAIN CHARACTERISTICS IC VCE Vcesat-ty（p Vge=15V） 40 A 650V 1.7V N N-CHANNEL IGBT JT040K065WED/AED Package  UPS  APPLICATIONS Genera

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sales.Mr.wang13826508770 www.sztssd.com FINE MADE MICROELECTRONICS GROUP CO., LTD. XPM5220 (：S&CIC2196) 65W USB PD 1  - Quick Charge 2.0/3

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iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK5A65W，ITK5A65W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.2Ω (typ.) ·Enhancement

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK28A65W，ITK28A65W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.094Ω (typ.) ·Enhanc

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MOSFETs Silicon N-Channel MOS (DTMOS) TK14N65W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 100

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isc N-Channel MOSFET Transistor TK14G65W5 FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.3Ω. ·Enhancement mode: Vth =3 to 4.5V (VDS = 10 V, ID

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isc N-Channel MOSFET Transistor TK5P65W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤1.22mΩ. ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V,

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S20SC65WV Schottky Barrier Diodes 650V, 20A Feature ・SiCSBD ・Ultra High Recovery Speed ・Low Noise ・Pb free terminal ・RoHS:Yes OUTLINE Package (House

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MOSFETs Silicon N-Channel MOS (DTMOS) TK5P65W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON)

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