TK14N65W5 - N-Channel MOSFET

Toshiba

Datasheet Details

(1) Fast reverse recovery time: trr = 100 ns (typ. ) (2) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ. ) by using Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.69 mA) 3. Packaging and Internal Circuit TK14N65W5 1: Gate 2: Drain (Heatsink) 3: Source TO-247 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltag.

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Published: Nov 9, 2020 |