2.70-2.90 Datasheet | Specifications & PDF Download

IPD70R900P7S MOSFET 700V CoolMOSª P7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to th

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more than you expect Discrete Single Port 10/100 Base-T PDSO-G16 LANDatacom www.DataSheet4U.com Typical Common Electrical Characteristics 1 Inductan

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Avionics Pulsed Power Transistor, 700 Watts, 12/10/01 1.03-1.09 GHz, 32 µS Pulse, 2% Duty Rev. 0 PH1090-700B Features Q Q Q Q Q Q Q Q Absolute Maxi

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Microwave Components Chip Multilayer Hybrid Couplers 3dB Hybrid 0.9±0.1 (1) 1.6±0.15 3.2±0.15 (3) (2) 3.2±0.2 (3) (2) (1) 2.5±0.2 (4) (5) (6) 1.0±0.1

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MMIS70R900P Datasheet MMIS70R900P 700V 0.9Ω N-channel MOSFET  Description MMIS70R900P is power MOSFET using magnachip’s advanced super junction tech

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NCE70T900I，NCE70T900K N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction tech

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Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y (x = D or V, y = A, B, C, D, E or F) NCx57090y, NCx57091y are high−current single c

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NTE7090 Variable Output Voltage Regulator (Dual Tracking Type) Description: The NTE7090 is a dual tracking, variable output voltage regulator housed i

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NCE70R900I，NCE70R900K N-Channel Super Junction Power MOSFET Ⅱ General Description The series of devices use advanced super junction technology and d

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SP8804 3.3GHz ÷ 4 fixed Modulus Divider Advance Information DS2112 Issue 7.3 June 1999 Features q q q q q q q q Ordering Information SP8804/A/DG Mil

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Features • Fully integrated 769 – 935MHz transceiver including: - Chinese WPAN band from 779 to 787MHz - European SRD band from 863 to 870MHz - Nort

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PFP70R900 / PFF70R900 FEATURES  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge c

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MMD70R900Q Datasheet MMD70R900Q 700V 0.9Ω N-channel MOSFET  Description MMD70R900Q is power MOSFET using Magnachip’s advanced super junction technol

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Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y (x = D or V, y = A, B, C, D, E or F) NCx57090y, NCx57091y are high−current single c

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CGHV59070 70 W, 4.4 - 5.9 GHz, 50 V, RF Power GaN HEMT Description Wolfspeed's CGHV59070 is an internally matched gallium nitride (GaN) high electron

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M/A-COM PHI, INC. PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100µs PULSE, 10% DUTY OUTLINE DRAWING FEATURES ∗ NPN Silicon Mi

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Global LCD Panel Exchange Center www.panelook.com ,112/8; ',63/$< &25325$7,21 6 3 ( & , ) , & $7 , 2 1 &XVWRPHU 0RGHO 1DPH 63(& 12 'DWH 9HUVLRQ ϭ 3

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