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FDB0190N807L - 80V 270A N-Channel MOSFET

FDB0190N807L Description

FDB0190N807L N-Channel PowerTrench® MOSFET March 2016 FDB0190N807L N-Channel PowerTrench® MOSFET 80 V, 270 A, 1.7 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-st.

FDB0190N807L Features

* Max rDS(on) = 1.7 mΩ at VGS = 10 V, ID = 34 A
* Max rDS(on) = 2 mΩ at VGS = 8 V, ID = 31 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability

FDB0190N807L Applications

* Applications
* Industrial Motor Drive
* Industrial Power Supply
* Industrial Automation
* Battery Operated tools
* Battery Protection
* Solar Inverters
* UPS and Energy Inverters
* Energy Storage
* Load Switch 123 567 4 1. G

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80V 270A N-Channel MOSFET Fairchild Semiconductor
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