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FDB024N06

N-Channel MOSFET

FDB024N06 Features

* RDS(on) = 1.8 mΩ (Typ.) @ VGS = 10 V, ID = 75 A

* Fast Switching Speed

* Low Gate Charge

* High Performance Trench Technology for Extremely Low RDS(on)

* High Power and Current Handling Capability

* RoHS Compliant Description This N-Channel MOSFET i

FDB024N06 General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications

* Synchronous Rectification for ATX / Server / Telecom PSU

* Batte.

FDB024N06 Datasheet (574.62 KB)

Preview of FDB024N06 PDF

Datasheet Details

Part number:

FDB024N06

Manufacturer:

Fairchild Semiconductor

File Size:

574.62 KB

Description:

N-channel mosfet.

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TAGS

FDB024N06 N-Channel MOSFET Fairchild Semiconductor

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