FDB024N06 Datasheet | Fairchild Semiconductor

- N-Channel Power Trench® MOSFET N-Channel Power Trench® MOSFET 60 V, 265 A, 2.4 mΩ November 2013 Features - RDS(on) = 1.8 mΩ (Typ.) @ VGS = 10 V, ID = 75 A - Fast Switching Speed - Low Gate Charge - High Performance Trench Technology for Extremely Low RDS(on) - High Power and Current Handling Capability - Ro HS pliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications - Synchronous Rectification for ATX / Server / Tele PSU - Battery Protection Circuit - Motor Drives and Uninterruptible Power Supplies - Renewable System D2-PAK MOSFET Maximum Ratings TC = 25o C unless otherwise noted. Symbol VDSS VGSS IDM EAS dv/dt Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Parameter - Continuous (TC = 25o C, Silicon Limited) - Continuous (TC = 100o C, Silicon Limited) - Continuous (TC = 25o C, Package...