20-42 Datasheet | Specifications & PDF Download

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4207 Audio Frequency General Purpose Amplifier Applications 2SC4207 Unit: mm  Small

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www.vishay.com SQM90142E Vishay Siliconix Automotive N-Channel 200 V (D-S) 175 °C MOSFET TO-263 Top View S D G FEATURES • TrenchFET® power MOSFE

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FJNS4202R FJNS4202R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias R

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TC4420 TC4429 6A HIGH-SPEED MOSFET DRIVERS FEATURES s s s s s s s s s s s s Latch-Up Protected Will Withstand >1.5A Reverse Output Curren

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Shenzhen Hi-Link Electronic Co.,Ltd HLK-LD2420 User Manual Version：V1.0 Revise date：Feb24,2023 All rights reserved © Shenzhen Hi-link Electronic..co L

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Ordering number : ENA0315 LA42072 Monolithic Linear IC Audio Output for TV application 7W × 2ch Power Amplifier Overview LA42072 is 7W 2-channel AF

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Ordering number : ENA0714 Monolithic Linear IC LA42205 Overview Audio Output for TV application 5W × 2ch Power Amplifier The LA42205 is a 5W 2-ch

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PT4205 30V, 1.2A Step-down HB LED Driver GENERAL DESCRIPTION The PT4205 is a continuous conduction mode inductive step-down converter, designed for dr

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Ordering number : ENA0855 Monolithic Linear IC LA42032 Overview Audio Output for TV application 5W × 2ch Power Amplifier LA42032 is 5W 2-channel

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w w w .D at h S a t e e 4U . m o c Agilent AT-42085 Up to 6 GHz Data Sheet Features Medium Power Silicon Bipolar Transistor • High Output P

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LC420EUF Product Specification SPECIFICATION FOR APPROVAL ( ● ) Preliminary Specification ( ) Final Specification Title BUYER MODEL Philips 42.0”

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Product Specification SPECIFICATION FOR APPROVAL LC420WUH ( ) Preliminary Specification ( ● ) Final Specification Title BUYER MODEL General 42.0”

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2SC3420 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3420 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm •

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isc N-Channel MOSFET Transistor IRFR420TR, IIRFR420TR ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3Ω ·Enhancement mode: ·100% avalanche tes

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