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DWCS2200 AC / DC Sensing Current Sensor with Digital Data output Feature: ⚫ Small package with digital current output ⚫ Continuous、AT Command、Modbus

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R SCHOTTKY BARRIER DIODE HBR3200 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 3A 200 V 175 ℃ 0.75V （@Tj=125℃）  、  APPLICATIONS  Low vol

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® A Leading Supplier of Magnetic Components 10/100 BASE MODULES 10/100BASE-TX TRANSFORMER MODULES For Auto MDI/MDIX Applications Features： Part NO

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U2008B Low-Cost Phase-Control IC with Soft Start Description The U2008B is designed as a phase-control circuit in bipolar technology. It enables load-

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MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient

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PT5618 200V Three-Phase Gate Driver DESCRIPTION The PT5618 is a high speed power MOSFET and IGBT driver with three independent high and low side refe

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PPT 100/1000BASE-T DUAL PORT MAGNETIC MODULES Designed to Support 1:1 Turns Ratio Transceivers  Compliant with IEEE 802.3u and ANSI X3.263 standar

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Global LCD Panel Exchange Center www.panelook.com PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BEG REPRODUCED OR COPI

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Tenergy Corporation 436 Kato Terrace Fremont CA 94539 Tel: 510-687-0388 Fax: 510-687-0328 TENERGY 18650 2200mAh Li-Ion Cell Product Name: Tenergy L

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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STR2000 Series Switching Type Features q q q q q Requires only 3 external components Small size and high efficiency Low switching noise Variable outpu

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Chipkingdom Electronics 3W CECL2009 CECL2009 BTL 。 5V 3Ω THD 10%、 3W 。 0.6µA。 CECL2009 ，。， CECL2009，， (2.0V-5.5V)。 。 ： ■ 10% ， 1KHZ ，： ·3 ，3

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Translated from chinese by: Esquiloesperto (Messias-BH.) ATX 2005 POWER SUPPLY PWM SUPERVISOR Power Supply Pulse Width Modulation Integrated Circuit C

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UNISONIC TECHNOLOGIES CO., LTD UTG40N120FQ-S Insulated Gate Bipolar Transistor 1200V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG40N120FQ

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2MBI800XNE120-50 Power Module (X series) 1200V / 800A / 2-in-1 package ■ Features Low VCE(sat) Low Inductance Module structure Solder pin terminals ■

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SS2020FL - SS20100FL SURFACE MOUNT SCHOTTKY BARRIER DIODES VOLTAGE RANGE: 20 - 100V CURRENT: 2.0 A Features The plastic package carries Underwriter

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TIGER Machine Translated by Google ELECTRONIC CO.,LTD Bipolar Circuit CS2003CP Seven-channel Darlington tube driver circuit 1. Overview CS2003CP i

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MBR2080CT, MBR2090CT, MBR20100CT SWITCHMODE™ Power Rectifiers This series uses the Schottky Barrier principle with a platinum barrier metal. These sta

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CMH20N50 500V N-Channel MOSFET General Description Product Summery These N-Channel enhancement mode power field effect transistors are produced us

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