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20.00 Datasheet, Features, Application

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TGS

CS2003CP - Seven Darlington Arrays

TIGER Machine Translated by Google ELECTRONIC CO.,LTD Bipolar Circuit CS2003CP Seven-channel Darlington tube driver circuit 1. Overview CS2003CP i.
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TENERGY

18650 - 2200mAh Li-Ion Cell

Tenergy Corporation 436 Kato Terrace Fremont CA 94539 Tel: 510-687-0388 Fax: 510-687-0328 TENERGY 18650 2200mAh Li-Ion Cell Product Name: Tenergy L.
3.0 · rating-3rating-3rating-3
Toshiba

C5200 - Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi.
2.0 · rating-2rating-2
ETC

ATX2005 - POWER SUPPLY PWM SUPERVISOR

Translated from chinese by: Esquiloesperto (Messias-BH.) ATX 2005 POWER SUPPLY PWM SUPERVISOR Power Supply Pulse Width Modulation Integrated Circuit C.
2.0 · rating-2rating-2
BOE

HV320WXC-200 - TFT LCD

Global LCD Panel Exchange Center www.panelook.com PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BEG REPRODUCED OR COPI.
2.0 · rating-2rating-2
ETC

30J127 - 600V 200A IGBT MOSFET

MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient.
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STMicroelectronics

2SC5200 - NPN Transistor

2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features ■ High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz t.
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BOE

HV320WHB-N00 - LCD

SPEC. NUMBER - PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE XINSHENG AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSI.
2.0 · rating-2rating-2
ROUM

20N60 - 20A 600V N-channel Enhancement Mode Power MOSFET

20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel Enhanced VDMOSFETs are obtained by the sel.
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ETC

MH2009A - MH2009 / MH2009A

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HAOHAI

BTA100-1200B - Specially Varieties 4Q-Triacs

100A 【】 BTA100 Series Specially Varieties 4Q-Triacs  :NPNPN,,;  :;、;、。  :、、、、、、;。 Part Number BTA100-600B BTA100-800B BTA100-1000B BTA100-1200B B.
1.0 · rating-1
Toshiba

2SC5200N - NPN Transistor

Bipolar Transistors Silicon NPN Triple-Diffused Type 2SC5200N 1. Applications • Power Amplifiers 2. Features (1) High collector voltage: VCEO = 230 V .
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UTC

ULN2003 - 7CH DARLINGTON SINK DRIVER

UNISONIC TECHNOLOGIES CO., LTD ULN2003 LINEAR INTEGRATED CIRCUIT 7CH DARLINGTON SINK DRIVER  DESCRIPTION The UTC ULN2003 are high-voltage, high-c.
1.0 · rating-1
UTC

20N60 - 600V N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 20N60 20A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using .
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UNIKC

P2003BDG - N-Channel MOSFET

P2003BDG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 20mΩ @VGS = 10V ID 28A TO-252 ABSOLUTE MAXIMUM RATI.
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Rohm

RF2001 - Fast recovery Diodes

www.DataSheet4U.com RF Diodes 1series Fast recovery Diodes (Silicon Epitaxial Planar) RF 1 series zExternal dimensions (Unit : mm) CPD 1.5 5.5 2.3 .
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Feihonltd

FHP20100 - Schottky diodes

1 1.A 2.K 3.A 72 Available RoHS* COMPLIANT 1 1.A 2.K 3.A 72) VRRM IF(AV) IFSM EAS IRRM dv/dt TJ,TSTG VBR IR=10mA TA=25 VF IF=5A IF=1.
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GROUP-TEK

HST-2027DAR - 10/100 BASE-TX TRANSFORMER MODULES

® A Leading Supplier of Magnetic Components 10/100 BASE MODULES 10/100BASE-TX TRANSFORMER MODULES For Auto MDI/MDIX Applications Features: Part NO.
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ETC

AT2005B - Power Supply Controller

Микросхема контроллера для системных блоков питания АТ2005В. Данная техническая спецификация является ознакомительной и не может заменить собой учтенн.
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ROUM

F630 - 9A 200V N-channel Enhancement Mode Power MOSFET

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