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CHIP FUSES ¥ 1. Fast-Acting Type 2. Suitable for over-current protection of the circuit of miniture portable equipment. 3. 4 sizes available : from 0402 to 1206. 4. No smoke, no flame, at the fusing conditions. 5. Certified UL and c-UL. ¥File No.: E176847 ¨ C |
 Kamaya |
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Thermally-Enhanced High Power RF LDMOS FET include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA120501EA Package H-36265-2 POUT (dBm) Drai |
 Infineon |
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50W High Power RF LDMOS FET include high gain and thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA120501EA Package H-36265-2 POUT (dBm) Drain Effici |
 MACOM |
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1-A Nano Module •1 Integrated Inductor • Miniature 3.5 mm × 3.5 mm × 1.75 mm Package • 1A Maximum Load Current • Input Voltage Range of 2.7 V to 5.5 V • Adjustable Output Voltage Range of 0.8 V to 3.6 V • ± 1% Feedback Tolerance Over Temperature • 2.4-µA (maximum) Q |
 Texas Instruments |
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NPN Transistor • This is a Pb−Free Device MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous Collector Current − Peak Electrostatic Discharge VCEO VCBO VEBO IC |
 ON Semiconductor |
