| Title | RF Mosfet |
| Description | The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA120501EA Package H-36265-2 POUT (dBm) Drain Efficiency (%) Power Sweep,... |
| Features |
include high gain and thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTVA120501EA Package H-36265-2
POUT (dBm) Drain Efficiency (%)
Power Sweep, Pulsed RF VDD = 50 V, IDQ = 50 mA, TCASE = 25°C,
300 µs pulse width, 10% duty...
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| Datasheet |
 PTVA120501EA Datasheet - 652.53KB |
| Distributor |
DigiKey |
| Stock | 0 In stock |
| Price |
No price available
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| BuyNow |
 BuyNow - Manufacturer a Infineon Technologies AG PTVA120501EAV1XWSA1
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| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
DigiKey |
No price available |
BuyNow |
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 Mouser Electronics |
No price available |
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 Richardson RFPD |
No price available |
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 EBV Elektronik |
No price available |
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