20H150C Datasheet | Specifications & PDF Download

Switch-mode Power Rectifier 150 V, 20 A MBRF20H150CTG, MBR20H150CTG Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • Hig

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MBR20H100CT-MBR20H200CT 20.0AMP. Schottky Barrier Rectifiers TO-220AB Features — Plastic material used carries Underwriters Laboratory Classification

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MBR20H150CT, MBRF20H150CT & MBRB20H150CT-1 Series New Product Vishay Semiconductors formerly General Semiconductor Reverse Voltage 150V Forward Curre

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Certificate TH97/10561QM Certificate TW00/17276EM MBR20H150CT PRV : 150 Volts Io : 20 Ampere FEATURES : * Guarding for overvoltage protection * High

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Pb RoHS COMPLIANCE CREAT BY ART MBR20H100CT - MBR20H200CT 20.0AMPS. Schottky Barrier Rectifiers TO-220AB Features — Plastic material used carriers

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Schottky Barrier Rectifier INCHANGE Semiconductor MBRF20H150CT FEATURES ·Schottky barrier chip ·Low Power Loss,High Efficiency ·Guard ring for trans

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Switch-mode Power Rectifier 150 V, 20 A MBRF20H150CTG, MBR20H150CTG Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • Hig

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MBRF20H150CT PRV : 150 Volts Io : 20 Ampere FEATURES : * Guarding for overvoltage protection * High frequency operation * Low forward voltage drop * L

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Schottky Barrier Rectifier INCHANGE Semiconductor MBR20H150CT FEATURES ·Dual rectifier construction，positive center tap ·Low Power Loss,High Efficie

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MBRF20H100CT thru MBRF20H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency -

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MBR20H150CT, MBRF20H150CT & MBRB20H150CT-1 Series New Product Vishay Semiconductors formerly General Semiconductor Reverse Voltage 150V Forward Curre

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TSI20H100CW - TSI20H200CW Taiwan Semiconductor 20A, 100V - 200V Trench Schottky Rectifiers FEATURES - Patented Trench Schottky technology - Excellen

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MBR20H150CT, MBRF20H150CT & MBRB20H150CT-1 Series New Product Vishay Semiconductors formerly General Semiconductor Reverse Voltage 150V Forward Curre

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www.DataSheet4U.com MICROELECTRONICS A A Power Discrete GMR20H150C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER DESCRIPTION Dual center tap schottky rect

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WN3S20H150C Dual power Schottky diode Rev.01 - 14 December 2021 Product data sheet 1. General description Dual common cathode power Schottky diode d

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AA MICROELECTRONICS Power Discrete GMR20H150C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER DESCRIPTION Dual center tap schottky rectifier designed for high

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TSD20H100CW – TSD20H200CW Taiwan Semiconductor 20A, 100V - 200V Trench Schottky Surface Mount Rectifier FEATURES ● Patented Trench Schottky technolo

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TSF20H100C thru TSF20H150C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Ex

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www.DataSheet.co.kr MBR20H150CT, MBRF20H150CT, SB20H150CT-1 www.vishay.com Vishay General Semiconductor Low Leakage Current 5.0 μA Dual Common-Cath

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TST20H100CW thru TST20H200CW Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperat

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