20M Datasheet | Specifications & PDF Download

IMZA120R020M1H CoolSiC™ 1200 V SiC Trench MOSFET Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection

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AIMBG75R020M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in In

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WG40N120MFW1 IGBT Rev.01 - 19 June 2024 Product data sheet 1. General description WG40N120MFW1 uses advanced Fine Trench Field-stop IGBT technology

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www.DataSheet4U.com PRELIMINARY VTM V•I Chip – VTM Voltage Transformation Module TM V048K120T025 K indicates BGA configuration. For other mounting

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AP70N20MP 200V N-Channel Enhancement Mode MOSFET Description The AP70N20MP is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned pl

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(1/10) Varistors(SMD) Countermeasure for Surge and Static Electricity Conformity to RoHS Directive AVR Series AVR-M, AVRL Types Varistor (Variable

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www.DataSheet4U.com PRELIMINARY VTM V•I Chip – VTM Voltage Transformation Module TM V048K120T025 K indicates BGA configuration. For other mounting

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CUSTOMER APPROVAL SHEET CUSTOMER： CUSTOMER P/N： DESCRIPTION： OUR ITEM： QUANTITY： DATE： PIC1207CMT-220M 10 PCS 2020/12/30 FULL APPROVAL CONDITIONAL

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XTR117 SBOS344D – SEPTEMBER 2005 – REVISED NOVEMBER 2023 XTR117 4-20mA Current-Loop Transmitter 1 Features • Low quiescent current: 130 µA • 5‑V regu

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BYV20MX-650P Ultrafast power diode Rev.01 - 23 December 2022 Product data sheet 1. General description Ultrafast power diode in a TO220F-2L plastic

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Crystalfontz America, Incorporated GRAPHIC TFT MODULE SPECIFICATIONS Crystalfontz Model Number CFAF176220M-T Hardware Version Revision A, April 200

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CC3120MOD SWRS205F – MARCH 2017 – REVISED DECEMBER 2024 CC3120MOD SimpleLink™ Wi-Fi CERTIFIED™ Network Processor Internet-of-Things Module Solution fo

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® ® ADC-318, ADC-318A 8-Bit, 120MHz and 140MHz Full-Flash A/D Converter FEATURES • Low power dissipation (960mW max.) OBSOLETE PRODUCT • TTL com

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® ® FEATURES ■ 8-bit resolution, 20MHz min. sampling rate ■ ±½LSB max. differential nonlinearity error ■ 18MHz input signal bandwidth ■ Subranging,

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Public IMDQ65R020M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology,

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® ® ADC-318, ADC-318A 8-Bit, 120MHz and 140MHz Full-Flash A/D Converter FEATURES • Low power dissipation (960mW max.) OBSOLETE PRODUCT • TTL com

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SMC4420M Single N-Channel MOSFET ■DESCRIPTION ■FEATURES SMC4420M is the N-Channel enhancement mode power field effect transistors are using trench

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NEX10000AUB 120 mA dual output LCD bias power supply Rev. 2.1 — 5 March 2025 Product data sheet 1. General description The NEX10000A is a power supp

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Public IMT65R020M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology,

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