210W Datasheet | Specifications & PDF Download

G081PU210W TECHNICAL DATA High Power Fiber Coupled Infrared Laser Diode Features • CW Output Power: 10 W • Typical 808 nm Emission Wavelength • High

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Ordering number : EN7461A LV8210W Overview Bi-CMOS IC A Spindle + CD-ROM Actuator The LV8210W is a DVD-ROM system motor driver. Features • Bi-CDM

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MMDT5210W…MMDT521ZW NPN Silicon Epitaxial Planar Digital Transistor Collector (Output) Base (Input) R1 R2 Emitter (Common) Resistance Values Type MM

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SDB22W THRU SDB220W Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 2 A PINNING PIN 1 2 1 DESCRIPTION Catho

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DC/DC Converter TEC 2WI Series, 2 Watt • Compact SIP-8 package • I/O-isolation voltage 1‘600 VDC • Ultra-wide 4:1 input voltage range • Fully regula

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AiT Components Inc. www.ait-components.com DS22W~DS220W SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE 20 TO 200V FORWARD CURRENT 2A DESCRIPTION The DS

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MMDT5210W…MMDT521ZW NPN Silicon Epitaxial Planar Digital Transistor Collector (Output) Base (Input) R1 R2 Emitter (Common) Resistance Values Type MM

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Product Specification SPECIFICATION FOR APPROVAL LM201W01 Liquid Crystal Display ( ● ) Preliminary Specification ( ) Final Specification Title BUYE

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2A Low Profile Chip Schottky Rectifier TSCD22W – TSCD210W 2A Low Profile Chip Schottky Rectifier Features  Lead less chip form, no lead damage  Lea

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Silicon Limiter Diodes Features • Low Insertion Loss and Noise Figure • High Peak and Average Operating Power • Various P1dB Compression Powers • Au D

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TM TAS5186 www.ti.com 6-Channel, 210-W, Digital-Amplifier Power Stage SLES136 – MAY 2005 FEATURES • Total Output Power @ 10% THD+N – 5×30 W @ 6Ω +

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MMDT5210W…MMDT521ZW NPN Silicon Epitaxial Planar Digital Transistor Collector (Output) Base (Input) R1 R2 Emitter (Common) Resistance Values Type MM

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Global LCD Panel Exchange Center www.panelook.com One step solution for LCD / PDP / OLED panel application: Datasheet, inventory and accessory www.

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G098PU210W TECHNICAL DATA High Power Fiber Coupled Infrared Laser Diode Features • CW Output Power: 10 W • Typical 808 nm Emission Wavelength • High

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Freescale Semiconductor Technical Data Document Number: MRF8S18210WHS Rev. 0, 4/2012 RF Power Field Effect Transistors N--Channel Enhancement--Mode

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Freescale Semiconductor Technical Data Document Number: MRF8S18210WHS Rev. 0, 4/2012 RF Power Field Effect Transistors N--Channel Enhancement--Mode

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  Features „ Embedded EEPROM y Very Easy Development with RFPDK y All Features Programmable „ Frequency Range: y 300 to 480 MHz (RFM210W) y 300 to 96

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MG7210WZ 1200V 25A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible Chips per Wafer 1200V 25A 1.7V 407pcs lFeature

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Bridge Rectifiers (Glass Passivated) GBPC 12, 15, 25, 35 SERIES Features • Integrally Molded Heat−Sink Provided Very Low Thermal Resistance for Maxim

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