210W Datasheet | Specifications & PDF Download

G081PU210W TECHNICAL DATA High Power Fiber Coupled Infrared Laser Diode Features • CW Output Power: 10 W • Typical 808 nm Emission Wavelength • High

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DC/DC Railway Converter TMR 10WIR Series, 10 Watt • Compact SIP-8 metal case • EN 50155 and EN 61373 approval for railway applications • Qualifica

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PDS22W THRW PDS220W Switching Diode Description Surface Mount Schottky Barrier Rectifier Rectifiers Reverse Voltage 20 to 200 V Forward Current 2.0 A

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AiT Components Inc. www.ait-components.com DS22W~DS220W SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE 20 TO 200V FORWARD CURRENT 2A DESCRIPTION The DS

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Global LCD Panel Exchange Center www.panelook.com One step solution for LCD / PDP / OLED panel application: Datasheet, inventory and accessory www.

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DC/DC Converter TDN 1WI Series, 1 Watt • Compact DIP package 13.2 x 9.1 x 10.2 mm • I/O-isolation 1'600 VDC • Fully regulated outputs • Operating te

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Freescale Semiconductor Technical Data Document Number: MRF8S18210WHS Rev. 0, 4/2012 RF Power Field Effect Transistors N--Channel Enhancement--Mode

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Product Specification SPECIFICATION FOR APPROVAL LM201W01 Liquid Crystal Display ( ● ) Preliminary Specification ( ) Final Specification Title BUYE

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MG7210WZ 1200V 25A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible Chips per Wafer 1200V 25A 1.7V 407pcs lFeature

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MMDT5210W…MMDT521ZW NPN Silicon Epitaxial Planar Digital Transistor Collector (Output) Base (Input) R1 R2 Emitter (Common) Resistance Values Type MM

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Freescale Semiconductor Technical Data Document Number: MRF8S18210WHS Rev. 0, 4/2012 RF Power Field Effect Transistors N--Channel Enhancement--Mode

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Silicon Limiter Diodes Features • Low Insertion Loss and Noise Figure • High Peak and Average Operating Power • Various P1dB Compression Powers • Au D

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Alfa-MOS Technology General Description AFN4210W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low

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  A  DV AC Thyristor Triac power switch AACT208W/10W General Description Available either in through-hole or surface-mount packages, the AACT2 suita

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MMDT5210W…MMDT521ZW NPN Silicon Epitaxial Planar Digital Transistor Collector (Output) Base (Input) R1 R2 Emitter (Common) Resistance Values Type MM

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GSDSS22W Series Surface Mount Schottky Rectifiers Product Description Reverse Voltage 20V to 100V Forward Current 2.0A Packages Features „ Ideally s

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MMDT5210W…MMDT521ZW NPN Silicon Epitaxial Planar Digital Transistor Collector (Output) Base (Input) R1 R2 Emitter (Common) Resistance Values Type MM

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MMDT5210W…MMDT521ZW NPN Silicon Epitaxial Planar Digital Transistor Collector (Output) Base (Input) R1 R2 Emitter (Common) Resistance Values Type MM

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SDB22W THRU SDB220W Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 2 A PINNING PIN 1 2 1 DESCRIPTION Catho

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MMDT5210W…MMDT521ZW NPN Silicon Epitaxial Planar Digital Transistor Collector (Output) Base (Input) R1 R2 Emitter (Common) Resistance Values Type MM

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