* Designed for Wide Instantaneous Bandwidth Applications
* Designed for Wideband Applications that Require 40 MHz Signal Bandwidth
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters
MRF8S18210WHSR3 Datasheet (745.76 KB)
MRF8S18210WHSR3
Freescale Semiconductor
745.76 KB
Rf power field effect transistors.
Freescale Semiconductor Technical Data
Document Number: MRF8S18210WHS Rev. 0, 4/2012
RF Power Field Effect Transistors
N
*Channel Enhancement.
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