MRF8S18210WHSR3 RF Power Field Effect Transistors

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MRF8S18210WHS Rev.0, 4/2012 RF Power Field Effect Transistors N *Channel Enhancement.
2.

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Datasheet Specifications

Part number: MRF8S18210WHSR3
Manufacturer: Freescale Semiconductor
File Size: 745.76 KB
Datasheet: MRF8S18210WHSR3-FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Applications

* with frequencies from1805 MHz to 1995 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* 1BT3yap0ni0dcwamlidASt,ihnPg=oleu3t
* . =8C4a5rM0riHWerzaW,ttIsn
* pCAuDvtgMS. ,iAgIQnPaeMlrPfaoAgrRnmita=und9ce. e9C: dVliBpDpD@in=g03,.00C1hV%

MRF8S18210WHSR3 Distributors

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MRF8S18210WHSR3 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF8S18210WHSR3-like datasheet