MRF8S26120HR3 - RF Power Field Effect Transistor

Motorola

MRF8S26120HR3 Datasheet Preview — Preview of MRF8S26120HR3 PDF

Datasheet Details

Part number	MRF8S26120HR3
Manufacturer	Motorola
File Size	534.11 KB
Description	RF Power Field Effect Transistor
Datasheet	MRF8S26120HR3_Motorola.pdf

MRF8S26120HR3 Product details

Description

22 μF, 35 V Tantalum Capacitor 330 nF, 100 V Chip Capacitor 15 nF, 100 V Chip Capacitor 2.2 μF, 100 V Chip Capacitors 22 μF, 50 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 27 pF Chip Capacitors 0.8 pF Chip Capacitor 1 kΩ, 1/4 W Chip Resistor 10 kΩ, 1/4 W Chip Resistor 7.5 Ω, 1/4 W Chip Resistor 0.030″, εr = 3.5 Part Number T494X226K035AT C3225X7R2A334KT C3225C0G2A153JT C3225X7R2A225KT C5750JF1H226ZT MCGPR63V477M13X26--RH ATC800B270JT500XT ATC100B0R8BT500XT CRCW12061K00FKEA CRCW120610K

Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems.
Optimized for Doherty.

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Published: Aug 14, 2010 |